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High-power IGBT drive circuit

A driving circuit and resistance technology, applied in the field of high-power IGBT driving circuit, can solve the problems of low driving power, low switching frequency and high price, and achieve the effect of strong driving ability and high switching frequency

Inactive Publication Date: 2015-05-13
WEIFANG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The existing high-power IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) drive circuits are all imported drive circuit boards, with high prices, low switching frequency, and low drive power.

Method used

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  • High-power IGBT drive circuit

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Embodiment Construction

[0007] The preferred embodiments of the present invention are given below in conjunction with the accompanying drawings to describe the technical solution of the present invention in detail.

[0008] Such as figure 1 As shown, the high-power IGBT drive circuit of the present invention includes the seventh integrated triode array Q7, the eighth integrated triode array Q8, the ninth triode Q9, the thirteenth triode Q10, the eleventh triode Q11, the twelfth triode Transistor Q12, twenty-second resistor R22, twenty-third resistor R23, twenty-fourth resistor R24, twenty-sixth resistor R26, twenty-eighth resistor R28, thirty-first resistor R31, thirty-first resistor Three resistors R33, thirty-ninth resistor R39, forty-second resistor R42, fourteenth diode D14, twenty-first diode D21, twenty-fourth diode D24, twenty-fifth diode The tube D25, the twenty-sixth diode D26, the eighth capacitor C8, the tenth capacitor C10, the eleventh capacitor C11, the fourth regulator tube Z4, the ni...

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Abstract

The invention discloses a high-power insulated gate bipolar translator (IGBT) drive circuit, which comprises a seventh integrated triode array and other components, wherein a ninth triode is connected with a thirty-first resistor; the thirty-first resistor is connected with the seventh integrated triode array, an eighth integrated triode array and a fourteenth diode; a twenty-eighth resistor is connected with the fourteenth diode; the seventh integrated triode array is connected with an eleventh triode; the eighth integrated triode array is connected with a twelfth triode; the twenty-eighth resistor is connected with a tenth triode and a twenty-third resistor; the twenty-third resistor is connected with a twenty-second resistor and an eighth capacitor; a twenty-fourth resistor is connected between the seventh integrated triode array and the eleventh triode; a twenty-sixth resistor is connected between the eighth integrated triode array and the twelfth triode; and the tenth triode is connected with a tenth capacitor, an eleventh capacitor and a fourth voltage-regulator tube. The high-power IGBT drive circuit implements fiber-optic isolation, and has high switching frequency and strong driving capability.

Description

technical field [0001] The invention relates to a driving circuit, in particular to a high-power IGBT driving circuit. Background technique [0002] The existing high-power IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) drive circuits are all imported drive circuit boards, with high prices, low switching frequency, and low drive power. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a high-power IGBT driving circuit, which realizes optical fiber isolation, high switching frequency and strong driving capability. [0004] The present invention solves the above-mentioned technical problems through the following technical solutions: a high-power IGBT drive circuit, characterized in that it includes a seventh integrated triode array, an eighth integrated triode array, a ninth triode, a thirteenth Pole tube, eleventh triode tube, twelfth triode tube, twenty-second resistor, twenty-third re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/567
Inventor 郭春华宗绪锋董辉史纪元王成端
Owner WEIFANG UNIVERSITY
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