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Method for refining trichlorosilane

A trichlorosilane and refining method technology, which is applied in the direction of halosilane and silicon halide compounds, can solve the problems of high energy consumption, large investment, and long process, and achieve the advantages of reduced equipment investment, strong operability, and simplified process Effect

Active Publication Date: 2012-12-05
CHINA TIANCHEN ENG +1
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  • Application Information

AI Technical Summary

Problems solved by technology

Applying the clapboard column to the refining of trichlorosilane overcomes the problems of long process, large investment and high energy consumption in the conventional process of refining trichlorosilane

Method used

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  • Method for refining trichlorosilane
  • Method for refining trichlorosilane

Examples

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Embodiment 1

[0057] Such as figure 2 As shown, the trichlorosilane refining process flow of the present invention, the mass flow rate of the raw material liquid and the composition of the raw material liquid are the same as in Comparative Example 1.

[0058]The process consists of a bulkhead rectification column 10, a bulkhead column reboiler 11, a bulkhead column condenser 12, a weight removal tower 13, a weight removal tower condenser 14, and a weight removal tower reboiler 15. The raw material crude trichlorosilane 101 enters the partition column 10 from the feed side of the partition section of the partition rectification column. Firstly, pre-separation is performed on the feed side of the partition, mainly to realize the separation of light components and heavy components. The light component and part of trichlorosilane enter the separation section A at the top of the tower from the clapboard feed rectification section C in the form of gas phase. The heavy component and part of tri...

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Abstract

The invention relates to a method for refining trichlorosilane. The refining of the trichlorosilane is implemented by utilizing the combination of a separator rectifying tower and a common rectifying tower (de-heavy fractionator). The refining process mainly comprises the following steps of: causing coarse trichlorosilane to enter the feed side of a separator section of the separator rectifying tower; after separation, obtaining a trichlorosilane product of which the purity is higher than 99.99 percent at the other side of the separator section, obtaining a mixture of light components and a small amount of trichlorosilane at the tower top and obtaining a mixture of heavy components and a small amount of trichlorosilane in a tower kettle; and causing a product generated by the separator rectifying tower to enter the conventional rectifying tower to implement two-stage de-heavy treatment so as to finally obtain the trichlorosilane with the purity of 99.999999999 percent, which meets the purity requirement of electronic polycrystalline silicon. Compared with a conventional trichlorosilane refining method, the method for refining the trichlorosilane has the advantages that the rectification flow is shortened; the complete thermal coupling in the tower is implemented; the investment is reduced; the energy consumption is reduced; and the occupied area is saved.

Description

technical field [0001] The invention relates to an energy-saving method for refining trichlorosilane in the polysilicon production process. technical background [0002] Polysilicon is the most basic functional material in the semiconductor industry, electronic information industry, and solar photovoltaic cell industry. High-purity polysilicon can be divided into solar grade and electronic grade according to the purity classification. The purity of solar-grade polysilicon is 99.99%-99.9999%, the purity of electronic-grade polysilicon is greater than 99.9999%, and the ultra-high purity reaches 99.9999999%. [0003] In my country's current polysilicon industry, the improved Siemens process is widely used. The main raw materials are high-purity hydrogen and high-purity trichlorosilane. The principle is to reduce high-purity trichlorosilane with high-purity hydrogen on a high-purity silicon core at a temperature of about 1100 ° C to generate polysilicon and deposit it on the s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/107
Inventor 裴艳红李强马国栋耿玉侠
Owner CHINA TIANCHEN ENG