Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and programming method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their programming, can solve problems such as interference and achieve the effect of reducing interference

Active Publication Date: 2016-12-14
SK HYNIX INC
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Although an odd or even string is selected and a program operation using the ISPP method is performed as described above, interference 2ΔX+2ΔY occurs between adjacent memory cells within the same string and adjacent memory cells within the same page

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and programming method thereof
  • Semiconductor device and programming method thereof
  • Semiconductor device and programming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] Hereinafter, some exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The drawings are provided to enable those of ordinary skill in the art to understand the scope of the embodiments of the present invention.

[0031] image 3 is a block diagram of a semiconductor device for illustrating a program operation according to the present invention.

[0032] refer to image 3 , the semiconductor memory device includes: a memory cell array 110; a plurality of circuits (130, 140, 150, 160, 170, and 180) configured to perform a program operation or a read operation on memory cells included in the memory cell array 110 and a controller 120 configured to control a plurality of circuits (130, 140, 150, 160, 170, and 180) to set threshold voltages of selected memory cells based on input data.

[0033] The circuit of the NAND flash memory device may include a voltage generator 130, a row decoder 140, a page buffer...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for programming a semiconductor device, comprising the steps of: performing a least significant bit (LSB) programming operation on a selected memory cell; performing soft programming on the remaining memory cells except the memory cell on which the LSB programming operation has been performed operations; and performing a most significant bit (MSB) program operation on a memory cell selected from the memory cells on which the LSB program operation has been performed and the memory cells on which the soft program operation has been performed.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to Korean Patent Application No. 10-2011-0055529 filed with the Korean Patent Office on Jun. 9, 2011, the entire contents of which are hereby incorporated by reference. technical field [0003] One embodiment of the present invention relates to a semiconductor device and a programming method thereof, and more particularly to a semiconductor device and a programming method thereof that reduce interference between adjacent cells during a programming operation. Background technique [0004] figure 1 is a circuit diagram of a memory cell array used to illustrate problems with known programming operations. [0005] The following will refer to figure 1 A memory cell array of a NAND flash memory device among semiconductor devices is described. [0006] A memory cell array of a NAND flash memory device includes a plurality of memory blocks. Each block includes strings STe and STo. Each of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10
CPCG11C16/0483G11C16/10G11C16/3427G11C16/34
Inventor 安圣薰
Owner SK HYNIX INC