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High-purity copper anode for copper electroplating, method for producing same, and copper electroplating method

A manufacturing method, high-purity technology, applied in the direction of the electrode, etc., can solve the problems that cannot be said to be sufficient, and achieve the effect of preventing pollution and suppressing anode residue

Active Publication Date: 2012-12-26
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In the conventional electrolytic copper plating in a pyrophosphoric acid bath using a copper plating anode, it is not sufficient to prevent the generation of residues mainly composed of copper powder or metal salt.

Method used

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  • High-purity copper anode for copper electroplating, method for producing same, and copper electroplating method
  • High-purity copper anode for copper electroplating, method for producing same, and copper electroplating method
  • High-purity copper anode for copper electroplating, method for producing same, and copper electroplating method

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Embodiment

[0055] Tough copper (TPC) with a purity of 99.9% by mass or higher, high-purity copper with a purity of 99.99% by mass or higher (4N OFC), and high-purity copper with a purity of 99.999% by mass or higher (5N OFC) with a purity of 99.9999% by mass or higher The recrystallized or cast material of ultra-high-purity copper (6N OFC) is subjected to hot working (temperature, processing method, processing rate) and / or cold working (processing method, processing rate) and heat treatment ( temperature, time), or, these processings were repeated, water cooling was carried out after the heat treatment, and high-purity copper anodes of the present invention (referred to as anodes of the present invention) 1 to 20 of the specified dimensions shown in Table 3 were manufactured.

[0056] The cold drawing process in this Table 1 refers to the process of forming a linear sample with a cross-sectional shape of φ60 mm into a cross-sectional shape of φ30 mm by drawing, and the sphere forming proc...

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Abstract

Provided are a highly pure copper anode for electrolytic copper plating, a method for manufacturing the same, and an electrolytic copper plating method using the highly pure copper anode. The highly pure copper anode obtains a crystal grain boundary structure having a special grain boundary ratio LσN / LN of 0.35 or more. LN is a unit total special grain boundary length. LσN is a unit total special boundary length. By having the configuration described above, plating defect can be reduced by suppressing the occurrence of the particles, such as the slime or the like, which are generated on the anode side in the plating bath.

Description

technical field [0001] The present invention relates to a high-purity copper anode for electrolytic copper plating that prevents the generation of particles such as residues generated on the anode side in the electrolytic copper plating bath when performing electrolytic copper plating using a copper pyrophosphate bath, and a method for producing the same. It relates to an electrolytic copper plating method using a high-purity copper anode that can reduce defective plating due to particle generation. [0002] This application claims priority based on Japanese Patent Application No. 2010-077215 for which it applied to Japan on March 30, 2010, and uses the content here. Background technique [0003] Conventionally, in electrolytic copper plating performed in a pyrophosphoric acid bath used for through-hole plating of printed circuit boards, high-purity copper is used for the anode electrode for copper plating. [0004] However, in the above-mentioned electrolytic copper platin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D17/10C22F1/08
CPCC25D17/10C22F1/00C22F1/08
Inventor 中矢清隆喜多晃一熊谷训加藤直树渡边真美
Owner MITSUBISHI MATERIALS CORP
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