Unlock instant, AI-driven research and patent intelligence for your innovation.

Electrostatic chucks, substrate treating apparatuses including the same, and substrate treating methods

A technology of electrostatic chuck and processing equipment, which is applied in the direction of circuits, discharge tubes, electrical components, etc., and can solve problems such as the inappropriate temperature state of the substrate

Inactive Publication Date: 2013-01-02
SEMES CO LTD
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when the initial stage of the plasma treatment process is performed, the temperature regime of the substrate is unfavorable

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrostatic chucks, substrate treating apparatuses including the same, and substrate treating methods
  • Electrostatic chucks, substrate treating apparatuses including the same, and substrate treating methods
  • Electrostatic chucks, substrate treating apparatuses including the same, and substrate treating methods

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Hereinafter, an electrostatic chuck, a substrate processing apparatus, and a substrate processing method according to preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings. To avoid unnecessarily obscuring the subject matter of the present invention, details related to well-known functions or constructions have not been described in detail.

[0021] figure 1 is a cross-sectional view showing an apparatus for processing a substrate according to an embodiment of the present invention. refer to figure 1 , the substrate processing apparatus 10 according to the current embodiment generates plasma for processing a substrate. The substrate processing apparatus 10 includes a processing chamber 100 , an electrostatic chuck 200 , a gas supply part 300 and a plasma generation part 400 .

[0022] The processing chamber 100 has an inner space 101 . The inner space 101 serves as a space where the substrate W is...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is an electrostatic chuck for fixing a substrate by using an electrostatic force, which include a dielectric plate on which the substrate is placed, a first electrode disposed in an inner center region of the dielectric plate, and charged negatively or positively, and a second electrode disposed in an inner edge region of the dielectric plate to surround the first electrode, and charged with polarity opposite to that of the first electrode. The second electrode has an area different from that of the first electrode.

Description

technical field [0001] The present invention relates to a substrate processing device, and more particularly, to a substrate processing device including an electrostatic chuck. Background technique [0002] Semiconductor manufacturing equipment includes electrostatic chucks for holding wafers in process chambers. This type of electrostatic chuck holds the substrate by using electrostatic force. Electrostatic chucks can be classified into monopolar electrostatic chucks including one electrode and bipolar electrostatic chucks including two electrodes. [0003] Unipolar electrostatic chucks are superior to bipolar electrostatic chucks in terms of electrostatic force. However, unipolar electrostatic chucks require a plasma to form an electrical circuit that holds the substrate. Therefore, when the unipolar electrostatic chuck is used in a substrate processing process, He gas is supplied to the substrate after plasma generation. Therefore, when the initial stage of the plasma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01J37/32
CPCH01L21/6833H01J37/32715
Inventor 李元行
Owner SEMES CO LTD