Photosemiconductor element and method for manufacturing photosemiconductor element
A technology for optical semiconductor components and manufacturing methods, which can be applied in the directions of semiconductor devices, electrical components, and electric solid-state devices, and can solve problems such as the restriction of conductive pillars.
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Embodiment approach 1
[0065] (Structure of Optical Semiconductor Element 10)
[0066] refer to figure 1 An optical semiconductor element 10 according to one embodiment of the present invention will be described.
[0067] figure 1 A schematic diagram showing the structure of the optical semiconductor element 10 according to one embodiment of the present invention is shown in . In the optical semiconductor element 10 , a first conductivity type semiconductor layer 12 is formed on an insulating transparent substrate 11 . Furthermore, the second conductivity type semiconductor layer 13 is formed on a part of the upper surface of the first conductivity type semiconductor layer 12 . In this embodiment, a sapphire substrate 11 is used as the insulating transparent substrate 11 . In this embodiment, the first conductive type semiconductor layer 12 and the second conductive type semiconductor layer 13 are composed of n-type and p-type gallium nitride-based compound semiconductors. Therefore, the first ...
Embodiment 1
[0139] Figure 4 The measurement result of the pulse period dependence of a plating ratio ratio in the manufacturing method of the optical-semiconductor element which concerns on one Embodiment of this invention is shown. The manufacturing method of the optical semiconductor element 10 is based on figure 2 The manufacturing method shown. after passing figure 2 After the steps (a) to (d), bump formation by electroplating was performed (see figure 2 (e)). exist Figure 4 When the bump is formed, the pulse frequency of the electroplating current as the pulse waveform is changed within the range of 0.1 second to 1000 seconds, and the ratio of the thickness of the n-pole bump 52 to the thickness of the p-pole bump 51 is set is the plating ratio.
[0140] exist Figure 4 The measured values are represented by empty circles. The dotted line is a curve obtained as a result of fitting to the measured values. The solid line represents the plating ratio obtained by direct c...
Embodiment 2
[0144] Figure 6 In the manufacturing method of the optical-semiconductor element 10 which concerns on one Embodiment of this invention, the experiment result which measured the relationship of the area ratio of the opening part 21 and a plating rate ratio is shown. The plating conditions in this example are as follows.
[0145] ·Electroplating solution: cyanide-free gold plating solution manufactured by EEJA
[0146] ·Electroplating tank temperature: 52°C
[0147] ·Plating current density: DC 6mA / cm 2
[0148] Object to be plated: Wafer (6 inches) for producing optical semiconductor elements
[0149] Under the above-mentioned conditions, electroplating was performed using a wafer without openings 21 (opening ratio 0%) and a wafer with openings 21 formed (opening ratio 6%). As a result, such as Figure 6 As shown, the following results were obtained: the plating rate ratio was about 1.00 when the area ratio of the opening 21 was 0% (opening ratio 0%), and the plating rat...
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