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A kind of manufacturing method of Damascus structure

A production method and technology of nitride film, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as difficulties in lithography rework, and achieve the effects of stable process, easy control of process, and simple and easy control of process

Active Publication Date: 2017-11-07
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Description
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Problems solved by technology

[0016] The main purpose of the present invention is to, in view of the above problems, propose a method for fabricating a Damascus structure, use a nitride film instead of BAC to reduce the step height difference, solve the complex problem of difficult photolithography rework, reduce process costs, and improve process control degree, thereby increasing production efficiency

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  • A kind of manufacturing method of Damascus structure
  • A kind of manufacturing method of Damascus structure
  • A kind of manufacturing method of Damascus structure

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Embodiment Construction

[0039] Some typical embodiments embodying the features and advantages of the present invention will be described in detail in the description in the following paragraphs. It should be understood that the invention is capable of various changes in different examples without departing from the scope of the invention, and that the descriptions and illustrations therein are illustrative in nature rather than limiting the invention.

[0040] The above and other technical features and beneficial effects will be combined with the embodiments and the accompanying Figure 2-12 A method for fabricating a Damascus structure of the present invention will be described in detail.

[0041] figure 2 It is a schematic flow chart of a preferred embodiment of a method for fabricating a Damascene structure of the present invention. In this embodiment, a method for fabricating a damascene structure includes steps S01 to S10, and steps S01 to S10 are respectively carried out by attaching Figur...

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Abstract

The invention provides a method for fabricating a damascene structure, comprising sequentially depositing a dielectric barrier layer nitride film and a dielectric layer on a substrate; coating the first photoresist on the dielectric layer, and performing photolithography to form a through-hole etching Graphics; through etching and degumming, a through hole is formed on the dielectric layer; a nitride film is deposited in the through hole; a second photoresist is coated on the dielectric layer, and a groove etching pattern is formed through photolithography; After etching and stripping, trenches are formed; the through hole nitride film, the exposed intermediate stop layer nitride film and the dielectric barrier layer nitride film are etched; the metal fills the through hole and the trench. Therefore, through the method of the present invention, the preparation process is simplified, the etching process is more stable and easy to control, and the production efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuit manufacturing technology, and relates to a method for manufacturing a damascene structure. Background technique [0002] With the continuous development and progress of integrated circuit technology, the critical dimensions of semiconductor manufacturing processes continue to shrink, and the cross-sectional area and distance between interconnections on the chip continue to decrease. The increased interconnection resistance R and parasitic capacitance C greatly increase the time constant RC of the interconnection. Therefore, the time constant RC of the interconnection line accounts for an increasing proportion of the total delay of the integrated circuit, which becomes the main reason for limiting the interconnection speed. Above 0.13um process, semiconductors usually use aluminum as the metal material for subsequent wiring. When entering the process of 90nm and below, wi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
Inventor 姚嫦娲
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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