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Polysilicon resistor structure and manufacturing method thereof, polysilicon resistor
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A technology of polysilicon resistor and manufacturing method, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, circuits, etc., can solve the problem of long storage polysilicon strips, unfavorable saving of chip area, and the minimum width of storage polysilicon MPOL cannot be made very small, etc. question
Active Publication Date: 2017-02-08
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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However, the polysilicon resistor is an n-type resistor with a large temperature coefficient; in addition, the polysilicon has a high doping concentration, so the resistance value is small, which is not conducive to reducing the circuit area.
[0004] Chinese patent application CN 102214560A proposes a scheme for forming a polysilicon resistor by using a storage polysilicon MPOL, but the minimum width of the storage polysilicon MPOL cannot be made very small, thereby limiting the resistance value of the polysilicon resistor made. When a polysilicon resistor with a larger resistance value is required, a long storage polysilicon strip is required to achieve a large resistance, so it is not conducive to saving chip area
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no. 1 example
[0030] Figure 1 to Figure 5 A method for manufacturing a polysilicon resistor structure according to the first embodiment of the present invention is schematically shown.
[0031] Specifically, as shown in the figure, the method for manufacturing a polysilicon resistor structure according to the first embodiment of the present invention includes:
[0032] The first polysilicon layer deposition step is used to deposit a first polysilicon layer 2 on the substrate 1; for example, the substrate 1 is a silicon substrate, and the first polysilicon layer 2 forms the main body of the polysilicon resistor, like figure 1 shown; specifically, the first polysilicon layer 2 is, for example, the control gate layer of the self-aligned non-volatile memory, so that the first a polysilicon layer deposition step;
[0033] Silicon nitride layer deposition and etching steps, for depositing a silicon nitride layer 3 on the first polysilicon layer 2, and etching the silicon nitride layer 3 to fo...
no. 2 example
[0042] Figure 1 to Figure 4 as well as Image 6 and Figure 7 A method for manufacturing a polysilicon resistor structure according to a second embodiment of the present invention is schematically shown.
[0043] Specifically, as shown in the figure, the method for manufacturing a polysilicon resistor structure according to the second embodiment of the present invention includes:
[0044] The first polysilicon layer deposition step is used to deposit a first polysilicon layer 2 on the substrate 1; for example, the substrate 1 is a silicon substrate, and the first polysilicon layer 2 forms the main body of the polysilicon resistor, like figure 1 shown; specifically, the first polysilicon layer 2 is, for example, the control gate layer of the self-aligned non-volatile memory, so that the first a polysilicon layer deposition step;
[0045] Silicon nitride layer deposition and etching steps, for depositing a silicon nitride layer 3 on the first polysilicon layer 2, and etchi...
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Abstract
The invention provides polyresistor structures, a preparation method thereof and a polyresistor. The preparation method comprises the following steps: depositing a first polysilicon layer on a substrate; depositing a silicon nitride layer on the first polysilicon layer and etching the silicon nitride layer to form a first sunk part and a second sunk part in the silicon nitride layer, thus dividing the silicon nitride layer into three parts; depositing an isolator layer and a second polysilicon layer on the silicon nitride layer; etching the silicon nitride layer, thus removing the two sides of the silicon nitride layer; and forming polysilicon side walls on the two sides of the first polysilicon layer respectively, forming laminate side walls on the two sides of the laminate of the silicon nitride layer, the isolator layer and the second polysilicon layer respectively and forming a first contact hole and a second contact hole, which are respectively contacted with the surface on the two sides of the first polysilicon layer, on the two sides of the first polysilicon layer respectively.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, and more specifically, the invention relates to a polysilicon resistor structure and a manufacturing method thereof. Background technique [0002] In semiconductor chip circuit design, a large number of polysilicon resistors are used. Generally, circuit designers use traditional N-type or P-type polycrystalline resistors, but these resistors require a silicide barrier layer (salicideblock layer, SAB) as an additional mask to protect the surface of the silicon chip during the manufacturing process. Under its protection, the silicon wafer does not form undesired metal silicides with other metals such as Ti and Co, which requires an additional photolithography step. Specifically, N-type doped polysilicon or P-type doped polysilicon used as polysilicon resistors in the prior art is performed by performing N-type ion implantation (usually High-concentration boron (B) ion implantation) or P...
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