Device and method for preparing high-purity ammonia by regeneration of ammonia-contained tail gas of electronic industry

A technology for the electronics industry and high-purity ammonia, applied in the preparation/separation of ammonia, hydrogen production, chemical industry, etc., can solve the problems of decomposition method consumption, multi-energy, etc., to overcome the easy poisoning of catalysts, reduce production costs, reduce Effect of pressure and temperature conditions

Active Publication Date: 2014-12-03
HUNAN HIEND PRODUCTS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] However, since the decomposition of ammonia is an endothermic reaction, in order to decompose ammonia into hydrogen and nitrogen more thoroughly, the ammonia decomposition reaction needs to be carried out at high temperature (such as 800°C), low pressure (the pressure of the tail gas is usually less than one atmospheric pressure, which is just right) and a catalyst Under the conditions, this means that the decomposition method needs to consume more energy

Method used

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  • Device and method for preparing high-purity ammonia by regeneration of ammonia-contained tail gas of electronic industry
  • Device and method for preparing high-purity ammonia by regeneration of ammonia-contained tail gas of electronic industry
  • Device and method for preparing high-purity ammonia by regeneration of ammonia-contained tail gas of electronic industry

Examples

Experimental program
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Effect test

Embodiment 1

[0075] see figure 1 As shown, a device for preparing high-purity ammonia by regeneration of ammonia-containing tail gas in the electronics industry includes a nitride reactor 100, a filter 200, an ammonia decomposition device 300, a first purifier 400, a booster pump 500, and a second purification Device 600 and high-purity ammonia synthesis device 700;

[0076] The nitrogen compound reactor 100 is connected with the filter 200 through the first pipeline 801, the filter 200 is connected with the ammonia decomposing device 300 through the second pipeline 802, and the ammonia decomposing device 300 is connected with the first purifying device 300 through the third pipeline 803 The first purifier 100 is connected with the booster pump 500 through the fourth pipeline 804, and the booster pump 500 is connected with the second purifier 600 through the fifth pipeline 805, and the second purifier 600 is connected through The sixth pipeline 806 is connected to the high-purity ammonia ...

Embodiment 2

[0080] see figure 2 As shown, repeat Example 1, the difference is that the first hydrogen-nitrogen supplementary adding pipe 902 is not set between the hydrogen-nitrogen ratio real-time monitoring device 901 and the second purifier 600 as the first hydrogen-nitrogen ratio adjustment device; and On the sixth pipeline 806 connecting the second purifier 600 and the high-purity ammonia synthesis device 700, a second hydrogen and nitrogen supplementary feeding pipe 903 is connected as a second hydrogen and nitrogen ratio adjustment device, and the second hydrogen and nitrogen supplementary feeding pipe 903 is provided with a third purifier 904 .

Embodiment 3

[0082] see image 3 and Figure 4Shown, repeat embodiment 1 or 2, and its difference is: described ammonia decomposition device 300 comprises ammonia gas input pipe 3100, heat exchanger 3200, ammonia decomposition furnace 3300, water cooler 3400, the 4th purifier 3500 and hydrogen Nitrogen mixture discharge pipe 3600; the heat exchanger 3200 is divided into a transverse channel and a longitudinal channel, and the transverse channel and the longitudinal channel are not connected to each other; the ammonia gas input pipe 3100 is connected to the inlet end of the transverse channel of the heat exchanger 3200 In communication, the outlet end of the transverse channel of the heat exchanger 3200 is connected to the inlet end of the ammonia decomposition furnace 3300 through the first branch pipe 3701, and the outlet end of the ammonia decomposition furnace 3300 is connected to the longitudinal direction of the heat exchanger 3200 through the second branch pipe 3702. The inlet end o...

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Abstract

The invention discloses a device for preparing high-purity ammonia by the regeneration of ammonia-contained tail gas of the electronic industry. The device comprises a filter, an ammonia decomposition device, a first purifier, a booster pump, a second purifier and a high-purity ammonia synthesizer, wherein a nitride reactor is connected with the filter via a first pipeline; the filter is connected with the ammonia decomposition device via a second pipeline; the ammonia decomposition device is connected with the first purifier via a third pipeline; the first purifier is connected with the booster pump via a fourth pipeline; the booster pump is connected with the second purifier via a fifth pipeline; and the second purifier is connected with the high-purity ammonia synthesizer via a sixth pipeline. The device disclosed by the invention has the advantages of environment protection, obvious energy-saving effect, safe production process and stable product quality, and the production cost is lowered.

Description

technical field [0001] The invention relates to a device and method for preparing high-purity ammonia by regenerating ammonia-containing tail gas, in particular to a device and a method for preparing high-purity ammonia by regenerating ammonia-containing tail gas in the electronics industry. Background technique [0002] Gallium nitride organic metal vapor deposition (MOCVD) equipment used to manufacture light-emitting diode (LED) epitaxial chips requires the use of large amounts of high-purity ammonia gas, which is combined with gallium-containing organometallic substances such as trimethylgallium or triethylgallium etc., the following is described by taking trimethylgallium as an example) to generate gallium nitride, and gallium nitride is the main semiconductor material for manufacturing LEDs. The reaction equation is as follows: [0003] [0004] In the large amount of ammonia gas entering the MOCVD equipment, only a very small amount of ammonia gas participates in th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01C1/12C01B3/04
CPCY02E60/364Y02E60/36Y02P20/10
Inventor 鲍坚仁鲍坚斌
Owner HUNAN HIEND PRODUCTS CO LTD
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