Preparation method of i-iii-vi material double-junction thin-film solar cell
A thin-film solar cell, I-III-VI technology, applied in circuits, electrical components, final product manufacturing, etc., can solve the problems of complex battery structure, increase battery cost, poor process compatibility, etc., to simplify battery structure, simplify Production process, the effect of solving the phenomenon of reverse junction
Active Publication Date: 2017-02-08
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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Problems solved by technology
Currently known I-III-VI chalcopyrite compound semiconductor double-junction thin-film solar cells use wide-bandgap semiconductor materials as the top cell and transparent conductive oxides as the back contact, which improves the conversion efficiency of the solar cell, but due to I-III -The chalcopyrite compound of group VI cannot realize the tunnel junction, and the process compatibility between the bottom cell and the top cell is poor, resulting in the inability to directly connect internally between the bottom cell and the top cell. Three or four contacts make the battery manufacturing process and battery structure complex, which increases the cost of battery manufacturing and batteries
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[0027] In order to further disclose the invention content, features and effects of the present invention, the following examples are specifically cited and described in detail in conjunction with the accompanying drawings as follows.
[0028] The preparation process of the I-III-VI group material double-junction thin film solar cell of the present invention:
[0029] Step 1: Prepare the back electrode Mo on the substrate by DC magnetron sputtering:
[0030] (1) At room temperature, first use a background vacuum of -3 Pa, the working pressure is high pressure of 1-2Pa, and the sputtering power is low power of 60W. Mo is deposited on the flexible polyimide substrate by DC magnetron sputtering. The deposition time is 60min, and the first layer is formed on the substrate. Mo film with a thickness of 0.05-0.1 μm;
[0031] (2) The background vacuum is -3 Pa, the working pressure is low pressure of 0.2-0.4Pa, and the sputtering power is high power of 150W. Mo is deposited on the fir...
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The invention relates to a method for preparing a double-knot thin film solar cell through I-III-VI group materials. The method includes: sequentially preparing a back electrode Mo, a bottom cell p-type absorbing layer, a bottom cell n-type buffer layer, a bottom cell intrinsic window layer, a connection layer, a top cell p-type absorbing layer, a top cell n-type buffering layer, a top battery intrinsic window layer, a top cell electric-conducting window layer and an electrode layer on a substrate. The inside of a bottom cell and the inside of a top cell are directly connected through the connection layer, the inside of the bottom cell and the inside of the top cell are serially connected, a cell structure and a cell manufacturing process are simplified, and manufacturing cost of the cell is reduced. Ultra-thin nanometer metal Mo is adopted for performing transition between transparent metal oxide and a top cell absorbing layer, the problem of reversed knotting caused by direct contacting is solved, and the advantage that a Mo thin film is favorable for growing the I-III-VI group materials is made full use.
Description
technical field [0001] The invention belongs to the technical field of thin film solar cells, in particular to a method for preparing a double-junction thin film solar cell made of I-III-VI group materials. Background technique [0002] At present, the solar cells used in the market are still dominated by the first-generation monocrystalline silicon / polycrystalline silicon cells, but the second-generation thin-film solar cells are recognized as the main direction of solar cell development in the future. Thin-film solar cells refer to solar cells made of materials with a thickness on the order of microns, which is one of the most effective ways to greatly reduce the cost of solar cells. Among many thin-film solar cells, I-III-VI compound semiconductor copper indium (gallium) selenium thin-film solar cells (also known as Cu(In,Ga)Se 2 (referred to as CIGS thin-film solar cells) has become a research hotspot in the photovoltaic industry due to its high conversion efficiency, g...
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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 李微杨立杨盼闫礼赵彦民冯金晖乔在祥
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST