Semiconductor device

A semiconductor and device technology, applied in the field of semiconductor devices using gallium nitride-based semiconductors, can solve problems such as limited withstand voltage

Active Publication Date: 2013-02-27
UNIV OF SHEFFIELD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0019] The applied voltage is the integral value of the electric field (at Figure 2B , Figure 3B , Figure 4B , Figure 5B is equivalent to the area of ​​the electric field), so in the existing pn junction, the withstand voltage is limited under the maximum electric field strength generated at the junction

Method used

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  • Semiconductor device
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no. 1 Embodiment approach ＞

[0109] The GaN-based semiconductor device of the first embodiment will be described.

[0110] The basic structure of the GaN-based semiconductor device is shown in Image 6 .

[0111] Such as Image 6 As shown, in this GaN-based semiconductor device, undoped In is sequentially stacked on a base substrate (not shown) such as a C-plane sapphire substrate on which a GaN-based semiconductor is grown on a C-plane. z Ga 1-z N layer 11 (0≤zx Ga 1-x N layer 12 (0y Ga 1-y N layer 13 (0≤yw Ga 1-w N layer 14 (0≤w<1).

[0112] In this GaN-based semiconductor device, when not in operation, the In near the base substrate is z Ga 1-z N layer 11 and Al x Ga 1-x Al in the vicinity of the heterointerface between the N layers 12 x Ga 1-x The N layer 12 induces positive fixed charges, and the Al on the side opposite to the base substrate side x Ga 1-x N layer 12 and In y Ga 1-y Al in the vicinity of the heterointerface between N layers 13 x Ga 1-x The N layer 1...

Embodiment 1

[0200] Such as Figure 23 As shown, on the (0001) plane, that is, on the C-plane sapphire substrate 31, TMG (trimethylgallium) was used as a Ga raw material and TMA (trimethylgallium) was used as a Ga raw material by conventionally known MOCVD (metal organic vapor deposition) technology. aluminum) as Al raw material, using NH 3( Ammonia) as nitrogen raw material, using N 2 gas and H 2 Gas is used as a carrier gas, and a low-temperature growth (530°C) GaN buffer layer 32 with a thickness of 30nm is stacked, and then the growth temperature is increased to 1100°C, and an undoped GaN layer 33 with a thickness of 1000nm and an undoped Al layer with a thickness of 47nm are continuously grown. x Ga 1-x N layer 34 (x=0.226), undoped GaN layer 35 with a thickness of 10 nm, and Mg-doped p-type GaN layer 36 with a thickness of 30 nm. The Mg doping amount becomes 3×10 according to the Mg concentration 19 cm -3 way to set.

[0201] The 4-terminal Hall measurement was carried out o...

no. 2 Embodiment approach ＞

[0211] The GaN-based diode of the second embodiment will be described.

[0212] Figure 24 represents the GaN-based diode.

[0213] Such as Figure 24As shown, in this GaN-based diode, an undoped GaN layer 41, an undoped AlGaN layer 42, an undoped GaN layer 43, and p-type GaN layer 44 . The upper portion of the undoped AlGaN layer 42, the undoped GaN layer 43, and the p-type GaN layer 44 are patterned into a predetermined shape to form a mesa. An anode electrode 47 is formed extending from the top surface and the side surface of one end of the mesa to the undoped AlGaN layer 42 adjacent to the mesa. The anode electrode 47 is formed of, for example, Ni or the like. In addition, a cathode electrode 48 is formed on the undoped AlGaN layer 42 apart from the mesa portion. The cathode electrode 48 is formed of, for example, a Ti / Al / Au laminated film or the like. In this GaN-based diode, a 2DHG 45 is formed in the undoped GaN layer 43 near the heterointerface between the undop...

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Abstract

Disclosed is a low-loss Gallium-Nitride semiconductor element that fundamentally eases peak electrical fields that arise locally in conductor channels, simultaneously increasing resilience and eliminating current collapse at a practical level, and is easily achieved by the use of polarized bonds. The semiconductor element comprises an InzGa[l-z]N layer (11) (where 0<=z<=1), an AlxGa[1-x]N layer (12) (where 0<x<1), an InyGa[1-y]N layer (13) (where 0<=y<1), and a p-type InwGa[1-w]N layer (14) (where 0<=w<1), which are sequentially layered on a base substrate such as a C-face sapphire substrate. When not operational, a two-dimensional positive hole gas (15) is formed on a portion of the InyGa[1-y]N layer (13) near the heterointerface of the AlxGa[1-x]N layer (12) and the InyGa[1-y]N layer (13), and a two-dimensional electron gas (16) is formed on a portion of the InzGa[l-z]N layer (11) near the heterointerface of the InzGa[l-z]N layer (11) and the AlxGa[1-x]N layer (12).

Description

technical field [0001] The present invention relates to semiconductor devices, and particularly to semiconductor devices using gallium nitride (GaN)-based semiconductors. Background technique [0002] In order to realize an energy-saving society, the importance of electric energy is increasing, and the 21st century relies more and more on electricity. The key components of electrical equipment and electronic equipment are semiconductor devices such as transistors and diodes. Therefore, the energy saving properties of these semiconductor devices are very important. At present, silicon (Si) semiconductor devices are responsible for power conversion devices, but performance improvement of the Si semiconductor devices has almost reached the limit of their physical properties, and it is difficult to achieve higher energy saving. [0003] Therefore, research and development of power conversion devices based on wide bandgap semiconductors such as silicon carbide (SiC) and gallium...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/338H01L29/06H01L29/41H01L29/47H01L29/778H01L29/80H01L29/812H01L29/861H01L29/872
CPCH01L29/1075H01L29/66462H01L29/778H01L29/80H01L29/78H01L29/66219H01L29/861H01L29/812H01L29/06H01L29/872H01L29/402H01L29/47H01L29/7786H01L29/0619H01L29/407H01L29/41H01L29/42316H01L29/2003H01L21/18
Inventor 中岛昭桑卡拉纳拉亚南·埃克纳特马达蒂尔住田行常河合弘治
Owner UNIV OF SHEFFIELD
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