Graphene quantum capacity measurement device and preparing method thereof

Abstract

The invention relates to a graphene quantum capacity measurement device and a preparing method of the graphene quantum capacity measurement device. The method includes that a gate electrode leading wire pattern, a source electrode leading wire pattern and a drain electrode leading wire pattern are formed on a substrate, a gate electrode pattern, a source electrode pattern and a drain electrode pattern are formed on the substrate and respectively contact the gate electrode leading wire pattern, the source electrode leading wire pattern and the drain electrode leading wire pattern. A gate medium layer pattern is formed on the gate electrode pattern. Graphene layer patterns are formed on the gate medium layer pattern, the source electrode pattern and the drain electrode pattern. Ohmic contact layer patterns which respectively correspond to the source electrode pattern and the drain electrode pattern are arranged on the graphene layer pattern. The graphene quantum capacity measurement device and the preparing method of the graphene quantum capacity measurement device can improve the measurement accuracy of graphene quantum capacity.

Description

technical field [0001] The invention relates to a quantum capacitance testing device, in particular to a graphene quantum capacitance testing device and a preparation method thereof. Background technique [0002] Two-dimensional materials with a single-layer sheet structure composed of carbon atoms, such as graphene, can be used for Fabricate a new generation of semiconductor devices with smaller size and faster conduction speed. [0003] Existing quantum capacitance test device based on graphene, comprises substrate, is formed with graphene, graphene as the channel material of semiconductor device on the substrate, forms source / drain electrode, gate dielectric (gate oxide layer) successively on it ) and the gate electrode. [0004] It can be seen that the quantum capacitance Cq of graphene and the capacitance Cox of the gate oxide layer are in series, and the total capacitance Ctotal is: [0005] Ctotal = 1 ...

AI Technical Summary

Problems solved by technology

[0006] Since there are no dangling bonds and hydrophilic groups on the surface of graphene, direct ALD (atomic layer deposition) cannot be performed, and the method of first depositing metal and then oxidation leads to increased EOT (equivalent oxide thickness) of the gate oxide layer; at the same time, due to The difference in energy band structure, Fowler-Nordheim (Fowler-Nordheim) tunneling is significantly larger than that of silicon semiconductor devices, and the physical thickness of the gate dielectric needs to be very large

Therefore, when using the existing above-mentioned structure, the physical thickness of the gate oxide layer is relatively large, and the capacitance Cox is small, while the quantum capacitance Cq of graphene itself is very large, so the total capacitance measured is mainly composed of the capacitance Cox of the gate oxide layer. decision, leading to the inaccurate quantum capacitance Cq of graphene

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