Wiring failure monitoring system for internal key of IGBT module and operating method thereof

A technology for internal and fault monitoring of modules, applied in the direction of measuring electricity, measuring devices, measuring heat, etc., can solve the problems of monitoring health status, power module failure, and difficulty in fault status.

Inactive Publication Date: 2013-03-20
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] 2. Except for a small number of power semiconductor devices with characteristic models implanted with temperature sensors, commonly used power modules cannot place sensors inside to monitor their health status;
[0010] 3. The fault of the key wire is affected by various external factors, and it is difficult to judge the fault state

Method used

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  • Wiring failure monitoring system for internal key of IGBT module and operating method thereof
  • Wiring failure monitoring system for internal key of IGBT module and operating method thereof
  • Wiring failure monitoring system for internal key of IGBT module and operating method thereof

Examples

Experimental program
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Example Embodiment

[0086] Example: An IGBT module internal key wiring fault monitoring system (see figure 1 ), including the IGBT power semiconductor module, which is characterized in that it includes a gate drive and protection circuit unit, a collector-emitter voltage and current monitoring unit, a gate voltage monitoring unit, a base plate temperature acquisition unit, a controller unit and a man-machine interface display unit ; Wherein, the input terminal of the collector-emitter voltage and current monitoring unit, the input terminal of the gate voltage monitoring unit and the input terminal of the base plate temperature acquisition unit respectively collect the collector-emitter voltage and current signal and the gate voltage signal of the IGBT power semiconductor module And the bottom plate temperature signal, their output ends are connected to the input end of the controller unit; the output ends of the controller unit are respectively connected to the input end of the emitter voltage and...

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Abstract

The invention discloses a wiring failure monitoring system for an internal key of an IGBT (insulated gate bipolar transistor) module. The wiring failure monitoring system is characterized in that the system comprises a gate drive and protective circuit unit, a beam voltage and current monitoring unit, a gate voltage monitoring unit, a bottom plate temperature acquiring unit, a controller unit and a man-machine interface display unit; the operating method of the system comprises the steps of signal acquiring, signal conditioning, signal conversion, failure diagnosis and man-machine exchange; the wiring failure monitoring system has the advantages that (1) a failure monitoring method is quick and accurate; (2) a wiring failure of the internal key of an IGBT is monitored in real time; (3) the rapidity and instantaneity of the monitoring are good; (4) the system is higher accuracy, and has a commercial application prospect; and (5) the system has generality for a power semiconductor device controlled by a switch.

Description

(1) Technical field: [0001] The invention relates to the technical field of fault diagnosis of power semiconductor devices, in particular to an IGBT (Insulated Gate Bipolar Transistor—Insulated Gate Bipolar Transistor, referred to as IGBT) module internal bond wire fault monitoring system and its working method. (2) Background technology: [0002] With the continuous advancement of power electronic technology, the role of power electronic systems in many industrial fields has become increasingly prominent, such as motor drives, electric vehicles, and solar and wind energy. The ever-expanding application fields of power electronic systems make their reliability, lifetime, health monitoring and predictive maintenance very important. In addition, one of the most prone to failure points of power electronic systems is power semiconductor devices, so studying the reliability of power semiconductor devices plays an important role in enhancing the reliability of the system and prolo...

Claims

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Application Information

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IPC IPC(8): G01R31/02G01K7/16G01R19/00
Inventor 杜明星魏克新岳有军谢琳琳胡震
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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