Organic semiconductor material and application thereof in organic light-emitting diode (OLED) device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HUNAN FUTURE ELECTRONICS TECH CO LTD
- Publication Date
- 2014-12-10
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Abstract
Description
technical field
[0001] The invention relates to an organic semiconductor material and its application in a hole injection layer of an OLED device. Background technique
[0002] Such as figure 1 As shown, the OLED device is mainly composed of a cathode 1 , a light emitting layer 2 , a hole injection layer (HIL) 3 , an anode 4 , and a substrate 5 sequentially stacked, and a power source 6 is connected to the cathode 1 and the anode 4 . The light-emitting layer 2 is an organic material. When preparing an OLED device, usually on the substrate 5, indium tin oxide (ITO) is first set as the anode 4, then the hole injection layer (HIL) 3 is set on the ITO anode 4, and then the light emitting layer is set on the hole injection layer 3. layer 2, and finally a metal cathode 1 is vapor-deposited on the light-emitting layer 2, for example, a layer of CsF and a layer of metal Al are vacuum-evaporated sequentially as the cathode 1. The method of arranging the luminescent layer 2 usually...