Oxygen plasma conversion process for preparing a surface for bonding
A technology of oxygen plasma and bonding surfaces, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as difficult layer transfer control
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Embodiment 1
[0114] to Si 3 N 4 The barrier layer was tested for its efficacy as a barrier layer in SiOG. In the first test, the SiOG structure was annealed at 600°C for 24 hours and secondary ion mass spectrometry (SIMS) analysis was used to measure contamination in the silicon lift-off layer. SIMS analysis revealed no contaminants. In the second test, a voltage of 100 V was applied between the top and bottom surfaces of the SiOG, and the sample was also heated to 600°C. Contaminants in the silicon membrane were detected again using SIMS. The contamination of the silicon release layer was found to be below the SIMS detection limit. A 5-layer SiOG structure made from the patent referred to above as '528 can pass the first test, but not the second.
[0115] This example confirms that Si 3 N 4 is a more effective barrier than otherwise provided by anodic bonding.
Embodiment 2
[0117] Si was synthesized by standard LPCVD method using argon-diluted silane and ammonia mixture, 40 sccm total gas flow rate, silane:ammonia = 3:1, 800°C temperature and 1 mTorr pressure in the chamber. 3 N 4 Films were deposited onto silicon donor tiles. This resulted in a deposition rate of approximately 2mm / min and formed a Si thickness of 100nm on the donor tile 3 N 4 Barrier layer deposition.
[0118] Try Si 3 N 4 Coated silicon donor tiles are bonded directly to Eagle glass support substrates or plates. Donor tiles for bonding can be prepared by treating the donor tiles in an RCA solution and drying. Glass plates were prepared by treating them in an ammonia bath and drying. The hydrophilicity of nitride and glass surfaces was determined using a Kruss DSA20 instrument to measure the surface wetting angle. The glass surface was found to be highly hydrophilic with a wetting angle of less than 2°. Discover Si 3 N 4 The surface of the barrier layer is moderately ...
Embodiment 3
[0121] A standard optimum grade silicon wafer measuring 300 mm in size, orientation, p-type, boron doped, resistivity 8 to 13 ohm-cm, and 775 microns thick was chosen as the donor wafer. Using the following LPCVD technique to Si 3 N 4 Layers are deposited onto a donor wafer. The wafer was loaded into the LPCVD reactor without stripping the native oxide film from the wafer. The LPCVD process was performed at 800°C. Selection of process temperature, pressure in the chamber and reactive gas results in stoichiometric Si with a thickness of 100 nm on the bonding surface of the donor wafer 3 N 4 Floor. Determination of deposited Si by ellipsometry 3 N 4 The thickness uniformity of the layer was found to be 100nm + / - 1%. Determination of deposited Si using AFM 3 N 4 The surface roughness of the layer was found to be 0.2nm RMS, which is sufficient for further wafer bonding process. Determination of deposited Si using the Tencor FLX method 3 N 4 The stress in the layer wa...
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