Method for preparing semiconductor sub-micron band on flexible substrate, and flexible optical waveguide

Abstract

The invention relates to a method for preparing a semiconductor sub-micron band on a flexible substrate, and a flexible optical waveguide. The method is based on an edge transfer method. According to the method, top-layer semiconductor on a semiconductor substrate on an insulator is etched into alternately arranged semiconductor strip structures; a buried oxide layer is corroded into a plurality of supporting structures by using an HF solution, such that suspended semiconductor band structures are formed on two sides of each semiconductor strip structure; a PDMS substrate is subjected to conformal contact with the semiconductor strip structures; the PDMS substrate is lifted towards a preset direction, such that the semiconductor band structures are separated from the semiconductor strip structures and are transferred to the PDMS substrate; and a silicon optical waveguide on the flexible substrate can be prepared with the prepared semiconductor sub-micron band. For a first time, the invention provides the method for realizing the transferring of the semiconductor sub-micron band to the flexible substrate by controlling the corrosion of the edges of the semiconductor material on the insulator. The controllability of the width and arrangement of the semiconductor sub-micron band are high. The semiconductor sub-micron band can be used for manufacturing devices with relatively high precisions. The method is simple, effective, and has low cost.

Description

Technical field [0001] The invention relates to a semiconductor structure and a preparation method, in particular to a method for preparing a semiconductor submicron band on a flexible substrate based on an edge transfer method and a flexible optical waveguide. Background technique [0002] In 1965, Gordon Moore pointed out: "As transistor sizes decrease, the number of transistors on silicon microprocessors will double every 18-24 months." This statement has been developed into the well-known Moore's Law, which is also regarded by the industry as the driving force for the development of the entire microelectronics industry, which has made the integration of integrated circuits and devices increasingly smaller. After 40 years of development of modern microelectronics technology, macroelectronics technology began to appear, and it has sprung up rapidly, occupying a considerable share of the market. Because the required coverage area in macroelectronics technology is much larger th...

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Problems solved by technology

The small-sized nano-film has insufficient attraction to the silicon substrate, which causes the film to be disordered or even clustered due to the destruction of the surface tension of the solution during the process of etching away the buried oxide layer and taking it out of the solution.

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