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A Photolithography Method Based on Metallic Glass Thin Film Phase Change Material

A phase change material and metallic glass technology, applied in optics, opto-mechanical equipment, photo-engraving process of patterned surface, etc., can solve the problems of blurred edges and insufficient steepness in the etching of multilayer films, and achieve high thermal conductivity, high thermal conductivity and high thermal conductivity. The effect of high etch selectivity

Active Publication Date: 2020-01-10
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0009] For the etching edge of the multilayer film in the prior art is fuzzy and not steep enough, the purpose of the present invention is to solve the above technical problems

Method used

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  • A Photolithography Method Based on Metallic Glass Thin Film Phase Change Material
  • A Photolithography Method Based on Metallic Glass Thin Film Phase Change Material
  • A Photolithography Method Based on Metallic Glass Thin Film Phase Change Material

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Embodiment 1

[0039] A 300nm PrAlNiCu metallic glass film was sputtered on a quartz substrate with a thickness of 1mm by magnetron sputtering. Among them, the specific sputtering parameters are direct current sputtering (DC), the argon pressure used is 0.3pa, the sputtering power is 60W, the target base distance is 120mm, the sputtering time is 15 minutes, and the pre-sputtering is 15 minutes before sputtering.

[0040] Using laser to expose, the specific steps are: by fixing the laser light source, placing the sample on the movable motor, importing the step sequence of the nanometer pattern to be obtained into the computer, and using the computer to control the motor step by step, so as to achieve the required Selective exposure direct writing of nanopatterns, figure 2 Shown is the pattern observed with a metallographic microscope after exposure. Such as image 3 As shown, the XRD pattern (a) before exposure is smooth and has no bumps, which is amorphous; the XRD pattern (b) after expos...

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Abstract

The invention discloses a metallic glass film phase-change material-based photoetching method, and belongs to the field of a semiconductor micro-nanofabrication; in the prior art, an etching edge of a multilayer film is fuzzy and is not steep enough; the method uses Pr-based metallic glass phase-change material film is used as a photoresist, Pr-based metallic glass is a metallic glass phase-change material with high stability and a low crystallization temperature, and is suitable for laser direct writing exposure heating-induced phase transition; the thermal conductivity is high, and a linewidth of a crystallization pattern can be accurately controlled by changing the laser power; the method has the characteristics of nontoxicity and innocuousness, and does not pollute the environment; the etching selectivity ratio is high and reaches 5:1, the process is simple and controllable, the production period is short, and the method is very suitable for the phase transition photoetching technology.

Description

technical field [0001] The invention belongs to the field of semiconductor micro-nano processing, and more specifically relates to a photolithography method based on a high etching selectivity ratio in a specific etching solution and a simple-to-operate phase-change material photoresist Pr-based metal glass film. Background technique [0002] In the current manufacturing process of micro-nano devices such as semiconductor devices, optoelectronic devices, and micro-electromechanical system devices, photolithography is one of the most important technologies. In order to prepare micro-nano apertures, there are currently three mainstream methods: electron beam lithography, focused ion beam lithography, and optical lithography. [0003] Since electron beam lithography and focused ion beam lithography need to be carried out in a strict vacuum environment, if the vacuum degree cannot meet the standard, the accumulation of dust on the optical device will cause the distortion of the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00
Inventor 缪向水罗腾李震
Owner HUAZHONG UNIV OF SCI & TECH
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