Unimolecule negative differential resistance device based on silicon-molecule compound system and preparation method

Abstract

The invention discloses a unimolecule negative differential resistance effect device based on a silicon-molecule compound system. The unimolecue negative differential resistance device is a unimolecule device prepared by utilizing of resonance between state density of a bivalent cobalt ion dz2 rail in a cobalt- phthalocyanine molecule and an S1 surface state of R3-silver / silicon surface. The unimolecule negative differential resistance device comprises a source electrode, a drain electrode, a grid electrode, the cobalt- phthalocyanine molecule and a tunneling layer. The single cobalt- phthalocyanine molecule is arranged between the source electrode and the drain electrode. The surface of the cobalt- phthalocyanine molecule is perpendicular to a connecting line between the source electrode and the drain electrode. Cobalt ions in the cobalt- phthalocyanine molecule are contacted with the source electrode. The tunneling layer is arranged between the drain electrode and the cobalt- phthalocyanine molecule. The invention further provides a method for preparing the unimolecule negative differential resistance effect device. The negative differential resistance effect of the molecule device is very stable and has nothing to do with doping kinds and doping density of the substrate. The unimolecule negative differential resistance device based on silicon-molecule compound system is small in size, high in property, capable of being widely applied to an electronic circuit based on nanometer materials in the future.

Description

technical field [0001] The invention relates to the technical field of electronic devices, in particular to a single-molecule negative differential resistance effect (NDR, Negative Differential Resistance) device based on a silicon-molecular composite system and a preparation method thereof, which can be used for high-frequency switching oscillators and frequency-locking circuits Wait. Background technique [0002] In recent decades, semiconductor devices have developed from the earliest electron tubes to today's large-scale integrated circuits. However, with the high-speed and high-capacity demands of information processing, it is difficult for traditional semiconductor devices to meet these demands. Therefore, finding newer, more stable and more powerful electronic devices has become an urgent problem to be considered and solved in electronic information technology. Research in recent years has also found that some macromolecules with definite spatial structure and elect...

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Problems solved by technology

However, the appearance of this negative differential resistance is greatly affected by external factors, such as the doping concentration of the silicon substrate, the measured temperature, etc. It is difficult to prepare a stable negative differential resistance device if this substrate is directly used

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