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A switch and input terminal technology, applied in the field of switches, can solve the problems of high-frequency signal amplitude distortion and different operating characteristics

Active Publication Date: 2016-03-02
SAMSUNG ELECTRO MECHANICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in bipolar transistors, the operating characteristics differ in forward and reverse directions
Therefore, in switches using bipolar transistors, distortion may occur to the amplitude of high-frequency signals

Method used

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no. 1 approach ）

[0024] figure 1 is a schematic circuit diagram showing the switch 100 according to the first embodiment of the present invention.

[0025] [1] Configuration of switch 100

[0026] The switch 100 according to the embodiment of the present invention will be described below. The switch 100 includes an input terminal CP into which a high-frequency signal is input, a first output terminal P1, a second output terminal P2, a first switching unit 102 connected between the input terminal CP and the first output terminal P1, and a first switching unit 102 connected between the input terminal CP and the first output terminal P1. A second switching unit 104 between the terminal CP and the second output terminal P2. The first switching unit 102 selectively outputs the high-frequency signal input to the input terminal CP through the first output terminal P1. Likewise, the second switching unit 104 selectively outputs the high-frequency signal input to the input terminal CP through the se...

no. 2 approach ）

[0053] Switch configurations according to embodiments of the present invention are not limited to figure 1 . image 3 is a schematic diagram of a switch 200 according to another embodiment of the present invention.

[0054] The switch 200 includes an input terminal CP to which a high-frequency signal is input, a first output terminal P1, a second output terminal P2, a first switching unit 202 connected between the input terminal CP and the first output terminal P1, and a terminal connected to the input A second switching unit 204 between the terminal CP and the second output terminal P2. similar to figure 1 As shown in the first switching unit 102, the first switching unit 202 selectively outputs the high-frequency signal input to the input terminal CP through the first output terminal P1. Likewise, something like figure 1 As shown in the second switching unit 104, the second switching unit 204 selectively outputs the high-frequency signal input to the input terminal CP th...

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Abstract

The present invention discloses a switch capable of switching while reducing distortion with respect to the amplitude of a high-frequency signal. The switch includes: an input terminal to which a high-frequency signal is input; a first switching unit connected between the input terminal and a first output terminal, and selectively outputs a high-frequency signal through the first output terminal; and a second The switching unit is connected between the input terminal and the second output terminal, and selectively outputs the high-frequency signal through the second output terminal. Each switching unit includes: an impedance transformer provided on a signal line; a bipolar transistor having an emitter connected to a ground, a collector connected to the signal line, and a base receiving a current applied thereto according to a control voltage; and a bipolar transistor. A polar transistor that has a collector that is grounded, an emitter that is connected to a signal line, and a base that receives current according to a control voltage.

Description

[0001] Related Application Cross Reference [0002] This application claims priority from Japanese Patent Application No. 2011-240564 filed in Japan Patent Office on Nov. 1, 2011, the contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to switches. Background technique [0004] As a switch for switching the path of a high-frequency signal used in wireless communication, for example, a gallium arsenide-based compound semiconductor high electron mobility transistor (HEMT) is used. However, the price of compound semiconductor wafers is relatively high, and no wafers with large apertures are currently available, so there is no advantage in price. [0005] Also, in recent years, in order to reduce the price of switches, for example, complementary metal oxide semiconductor (CMOS) switches have been developed. Common CMOS (bulk CMOS, bulkCMOS) can cause power leakage due to the low resistance of the substrate, and its swi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/567
CPCH03K17/007H03K17/16H04B1/48H03K17/06H03K17/60
Inventor 丹治康纪乙部英一郎
Owner SAMSUNG ELECTRO MECHANICS CO LTD