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Silicon carbide monocrystal cutting line positioning method

A cutting line and crystal technology, which is applied in the field of silicon carbide single crystal cutting line positioning, can solve the problem of high cost and achieve the effect of low cost and high precision

Active Publication Date: 2013-05-15
HEBEI SYNLIGHT CRYSTAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is costly and needs to use at least two ccd lenses to realize the control of the cutting speed during the initial alignment and cutting process

Method used

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  • Silicon carbide monocrystal cutting line positioning method
  • Silicon carbide monocrystal cutting line positioning method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] 1) Fix the cylindrical silicon carbide crystal 1 on the stage, the diameter of the crystal is 50.8mm, polish any bottom surface of the crystal, and adjust the position of the crystal 1 on the stage so that the cutting line 3 is in line with the polished bottom surface 2 parallel, a line light source 4 is arranged directly in front of the polished bottom surface 2, the line light source 4 is parallel to the cutting line 3, and is consistent with the relative position of the cutting line 3;

[0023] 2) An image acquisition camera 6 is installed directly in front of the polished bottom surface 2 and facing the cutting line 3 to collect images of the polished bottom surface 2, cutting line 3, and shadow line 5 in real time;

[0024] 3) Adjust the crystal in the horizontal direction: adjust the cutting line 3 to 1 / 3 from the top to the bottom directly in front of the polished bottom surface 2, the cutting line 3 is 5mm away from the crystal, the line light source 4 illuminate...

Embodiment 2

[0028] 1) Fix the cylindrical silicon carbide crystal 1 on the stage, the diameter of the crystal is 76.2mm, polish any bottom surface of the crystal 1 to make it smooth, and adjust the position of the crystal 1 on the stage so that the cutting line 3 is in line with the polished The bottom surface 2 is parallel, and a line light source 4 is arranged directly in front of the polished bottom surface 2, the line light source 4 is parallel to the cutting line 3, and is consistent with the relative position of the cutting line 3;

[0029] 2) An image acquisition camera 6 is installed directly in front of the polished bottom surface 2 and facing the cutting line 3 to collect images of the polished bottom surface 2, cutting line 3, and shadow line 5 in real time;

[0030] 3) Adjust the crystal in the horizontal direction: adjust the cutting line 3 to 1 / 3 from the top to the bottom directly in front of the polished bottom surface 2, the distance between the cutting line 3 and the crys...

Embodiment 3

[0034] 1) Fix the cylindrical silicon carbide crystal 1 on the stage, the diameter of the crystal is 101.6mm, polish any bottom surface of the crystal 1 to make it smooth, and adjust the position of the crystal 1 on the stage so that the cutting line 3 is in line with the polished The bottom surface 2 is parallel, and a line light source 4 is arranged directly in front of the polished bottom surface 2, the line light source 4 is parallel to the cutting line 3, and is consistent with the relative position of the cutting line 3;

[0035] 2) An image acquisition camera 6 is installed directly in front of the polished bottom surface 2 and facing the cutting line 3 to collect images of the polished bottom surface 2, cutting line 3, and shadow line 5 in real time;

[0036] 3) Adjust the crystal in the horizontal direction: adjust the cutting line 3 to 1 / 3 from the top to the bottom directly in front of the polished bottom surface 2, the cutting line 3 is 10mm away from the crystal, t...

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Abstract

The invention relates to a silicon carbide monocrystal cutting line positioning method. A line source is used for illuminating a cutting line right in the straight front of a bottom face of a crystal. The cutting line casts a shadow line on the bottom face of the crystal and detects the distance between the cutting line and the shadow line. The distance is used as a benchmark to adjust the position of the crystal so that the cutting line is kept parallel to the bottom face of the crystal and crystal sheets uniform in thickness are cut out.

Description

technical field [0001] The invention relates to a method for positioning a silicon carbide single crystal cutting line. Background technique [0002] When using a cutting wire to cut columnar crystals, it is required to accurately locate the relative position of the sand wire and the crystal in order to cut wafers with uniform thickness. At present, the commonly used method is to move the cutting line up and down on one side of the crystal, and observe the relative displacement between the cutting line and the crystal from the side of the crystal with the naked eye, so as to adjust the position of the crystal, and the thickness of the cut slice is not uniform. And the current equipment that uses wire-cut single crystal usually uses a ccd lens to take an image above the crystal to align the line, and another ccd lens is directly in front to locate the angle of the cutting line. This method is costly and needs to use at least two ccd lenses to realize the initial control of t...

Claims

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Application Information

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IPC IPC(8): B28D5/04
Inventor 邓树军高宇段聪赵梅玉陶莹
Owner HEBEI SYNLIGHT CRYSTAL CO LTD
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