Manufacturing method of semi-conductor device

Abstract

The invention discloses a manufacturing method of a semi-conductor device. The manufacturing method of the semi-conductor device comprises the following steps: providing wafers, and implementing an etching process; choosing regions of the wafers which are provided with particular shapes; adjusting injection parameters of etching gases in the regions which are provided with the particular shapes in the etching process; and feeding back the adjusted injection parameters to the etching process. Selection of the regions which are provided with the particular shapes is based on a running state of the etching process or distributing graphs on a photomast to proceed. The injection parameters of the etching gases comprise total flow, flow ratio of various etching gases constituent part or the etching gases. Adjustment of the injection parameters of the etching gases can be achieved through an electromagnetic valve or a control device of a motor valve. The manufacturing method of the semi-conductor device has the advantages of effectively controlling the phenomenon of inhomogeneity of etching produced by grains of the wafers in different etching processes and enhancing yield of the wafers.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for controlling etching uniformity. Background technique [0002] In order to meet the requirements of Moore's Law for the continuous reduction of semiconductor manufacturing costs, semiconductor devices manufactured by advanced technology are continuously miniaturized, and the size of wafers is continuously increased to maintain the growth of the semiconductor industry's profits. [0003] With the continuous development of the semiconductor manufacturing process, the number of crystal grains produced on a wafer is increasing, which leads to the continuous reduction of the feature size of each crystal grain. For the semiconductor process of 45nm and below nodes, during the patterning process of the wafer, the lithographically defined feature size (ADI) is the same for each grain of the wafer, and at the end of the etching process Afterwards, there will be a certa...

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Problems solved by technology

However, the temperature control method has certain limitations. Not all etching processes are sensitive to temperature changes. For example, when etching a low-k dielectric layer, the temperature control method cannot control the etching process well. Etching non-uniformity in

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