a photolithography method

Abstract

The invention provides a lithography method. The method is characterized by carrying out lithography on a depositional dielectric layer so as to form a photoetching pattern; after that, doping is performed on the photoetching pattern and then plasma processing or extreme ultraviolet processing is performed; forming a smoothing layer on a surface of the photoetching pattern. Therefore, under the conditions that a photoresist resolution and a sensitivity are not reduced, a line-width rough phenomenon of the photoetching pattern is improved. A feature size of a semiconductor device is controlled, wherein the semiconductor device is formed by the dielectric layer which is etched by a mask layer; the photoetching pattern possessing the smoothing layer is taken as the mask layer.

Description

technical field [0001] The invention relates to a semiconductor manufacturing method, in particular to a photolithography method. Background technique [0002] With the advancement of semiconductor manufacturing technology, while the size of semiconductor devices is continuously shrinking, the feature size (CD) of semiconductor devices is also required to be smaller and smaller. As we all know, the process flow of semiconductor manufacturing technology includes two very important steps: photolithography and etching; among them, the etching step often uses the photolithography pattern formed in the photolithography step as a mask to transfer the photolithography pattern to On the wafer, the photolithography process, which plays an important role in CD control, has been challenged unprecedentedly. The distance between the edges of the photolithographic pattern formed after lithography is called the line width (LineWidth). An important indicator to measure the line width is th...

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Problems solved by technology

[0004] In semiconductor manufacturing, resolution and sensitivity are also important parameters in photolithography steps. On the one hand, it is hoped to improve the resolution of photolithography, and on the other hand, it is also necessary to avoid the decline of photoresist sensitivity. From the calculation of RLS constant The relationship between the resolution, LWR and sensitivity expressed by the formula shows that in order to improve LWR, it is necessary to reduce the resolution and / or sensitivity in the photolithography process. Therefore, improving LWR and maintaining photoresist resolution The contradiction between rate and sensitivity has not been resolved

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