GaN-based light emitting diode (LED) chips in vertical structure and manufacturing method thereof
A light-emitting diode and vertical structure technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of chip damage, high cost, complicated process, etc., and achieve the effects of avoiding damage, reducing production cost, and simplifying the production process
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Embodiment 1
[0047] Example 1. A GaN-based light-emitting diode chip with a vertical structure, the structure is as image 3 Shown. From top to bottom, it includes an N electrode 180, a passivation layer 190, a GaN epitaxial layer 111, a conductive reflective layer 120, a diffusion barrier layer 130, a conductive bonding layer 140, a conductive support substrate 150, and a P electrode 200. Among them, the GaN epitaxial layer includes an n-type GaN layer, a light-emitting layer, and a p-type GaN layer; an N electrode is fabricated on the surface of the n-type GaN layer, which is covered by a passivation layer 190 deposited on the surface of the n-type GaN layer, and the N is removed by photolithographic etching. The passivation layer above the electrode exposes the N electrode 180; the back of the conductive support substrate 150 is provided with a P electrode 200.
[0048] The production method includes the following steps:
[0049] (1) such as Figure 1a As shown, an MOCVD method is used to g...
Embodiment 2
[0062] Embodiment 2: A GaN-based light-emitting diode chip with a vertical structure and its manufacturing method
[0063] The chip structure and preparation steps (1) to (3) are the same as in Example 1, the difference is:
[0064] (4) such as Figure 1c~1e As shown, a conductive reflective layer 120 is deposited on the mesa area. The conductive reflective layer 120 is made of Ni / Ag / Ti / Au with a thickness of 5 / 300 / 100 / 50nm; the diffusion barrier layer 130 is deposited, and the material of the diffusion barrier layer is Ti / Pt, the thickness is 100nm, 100nm; the conductive bonding layer 140 is deposited, and the conductive bonding layer 140 is made of Au with a thickness of 1μm;
[0065] (5) such as Figure 1f As shown, using thermocompression bonding technology, the epitaxial wafer is bonded to the supporting substrate 150. The supporting substrate is a conductive Si wafer. The metal layer 160 has been deposited on the bonding surface of the Si wafer. The metal layer material is fr...
Embodiment 3
[0069] As described in Example 1, the difference is: the conductive reflective layer 120 is made of Pt / Ag, Pt with a thickness of 5nm, and Ag with a thickness of 300nm; the diffusion barrier layer 130 is made of Ti / W, with a thickness of 100nm and 100nm, respectively; The material of the support substrate 150 is a SiC substrate, and the thickness is 200 μm. The GaN-based light-emitting diode chip with the vertical structure of the two-inch epitaxial wafer fabricated according to this embodiment has a good rate of no leakage of more than 90% after experimental testing.
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