Epitaxial deposition equipment, spray header and manufacturing method of spray header

An epitaxial deposition and shower head technology, applied in chemical instruments and methods, from chemically reactive gases, crystal growth, etc., can solve the problems of dust formation, shedding, etc.

Inactive Publication Date: 2013-06-05
BRILLIANT LIGHT TECH
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These reaction by-products are easy to come off from the surface of the shower head, forming dust

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Epitaxial deposition equipment, spray header and manufacturing method of spray header
  • Epitaxial deposition equipment, spray header and manufacturing method of spray header
  • Epitaxial deposition equipment, spray header and manufacturing method of spray header

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The epitaxial deposition equipment in the prior art has the problem that reaction by-products are easy to fall off from the shower head to form dust. Therefore, it is necessary to provide an epitaxial deposition equipment that can solve the above problems. Specifically, the present invention provides an epitaxial deposition device for depositing an epitaxial material layer, which includes a chamber, a substrate support seat arranged at the bottom of the chamber and a shower head arranged at the top of the chamber, the The shower head is arranged opposite to the substrate support seat and defines a reaction area therebetween. The gas outlet surface of the shower head facing the reaction area has a coating, and the coating makes the epitaxial layer material in the Surface deposition growth.

[0019] Compared with the prior art, in the epitaxial deposition equipment of the present invention, there is a coating on the surface of the shower head, and the coating is such that...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to epitaxial deposition equipment for deposition of an epitaxial material layer, a spray header for the epitaxial deposition equipment and a method for manufacturing the spray header. The epitaxial deposition equipment for deposition of the epitaxial material layer comprises a cavity, a substrate supporting seat and the spray header, wherein the substrate supporting seat is arranged at the bottom of the cavity, the spray header is arranged on the top of the cavity, the spray header and the substrate supporting seat are oppositely arranged, a refection region between the spray header and the substrate supporting seat is defined, and a gas outgoing surface of the spray header, which faces the reaction region, is provided with a coating which enables the epitaxial material layer to deposit and grow on a surface. The epitaxial deposition equipment can reduce byproducts and dust generated in an epitaxial deposition process.

Description

technical field [0001] The invention relates to the field of epitaxial deposition equipment, in particular to an epitaxial deposition equipment, a shower head for epitaxial deposition and a manufacturing method of the shower head. Background technique [0002] Since the rise of gallium nitride (GaN)-based third-generation semiconductor materials, the epitaxial structure of blue light-emitting diodes (LEDs) has been successfully developed, and the luminous intensity and white light luminous efficiency of light-emitting diode chips have been continuously improved. Semiconductor light-emitting elements are considered to be the next generation of new light sources entering the field of general lighting, so they have attracted widespread attention. [0003] In the prior art, the key equipment for manufacturing GaN-based blue LED epitaxial wafers is epitaxial equipment, such as metal organic chemical vapor deposition (MOCVD) equipment. MOCVD equipment is the key equipment used to...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/02C30B25/14
Inventor 梁秉文
Owner BRILLIANT LIGHT TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products