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Power semiconductor device

A technology of power semiconductors and semiconductors, which is applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc. It can solve problems such as difficult long-term use, easy damage to the connection part, and shortened life of power semiconductor devices, achieving light weight , the effect of high heat dissipation efficiency

Active Publication Date: 2013-06-05
HITACHI POWER SEMICON DEVICE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that the connection part is easily damaged and it is difficult to use for a long time
That is, the life of the power semiconductor device is shortened

Method used

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no. 1 approach

[0032] (structure)

[0033] Such as figure 1 As shown, the power semiconductor device 100 of the first embodiment includes a base body 1 , a semiconductor circuit 2 arranged on the base body 1 , and cooling fins 3 for cooling the semiconductor circuit 2 . Furthermore, the base 1 includes an edge 1a surrounding its periphery, a convex portion 1b formed over the edge 1a in a space surrounded by the edge 1a, and a bottom 1c formed with the convex portion 1b. In addition, the edge part 1a is one form of the "convex part" prescribed|regulated in the scope of protection. Therefore, in the present embodiment, two or more "protrusions" defined in the scope of protection are provided.

[0034] Detailed reference for the edge 1a, convex portion 1b, and bottom 1c figure 2 (a) to be described later.

[0035] Additionally, if figure 1 As shown, the power semiconductor device 100 includes a cooling jacket 14, a sealing member 5, a preform 6, an electrode 7, and wiring 2f. In addition...

no. 2 approach

[0099] Next, refer to Figure 10 The power semiconductor device 200 of the second embodiment will be described. Also, for figure 1 In the illustrated power semiconductor device 100 , the same components are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0100] In the power semiconductor device 200, the height of the convex portion 1b of the power semiconductor device 100 is approximately the same as the height of the edge portion 1a. That is, in the power semiconductor device 100, only one space is surrounded by the edge portion 1a. However, in the power semiconductor device 200, one space surrounded by the edge 1a is divided by the protrusion 1b, and two spaces are formed.

[0101] By forming the convex portion 1b in this way, the height of both the edge portion 1a and the convex portion 1b can be made higher than the height of the silicone gel 9 . Furthermore, even if the power semiconductor device 200 is configured in this wa...

no. 3 approach

[0104] Next, refer to Figure 11 The power semiconductor device 300 of the third embodiment will be described. Also, for figure 1 In the illustrated power semiconductor device 100 , the same components are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0105] In the power semiconductor device 300 , the shape of the cooling fin 3 is different from the shape of the cooling fin 3 of the power semiconductor device 100 . That is, the cooling fin 3 of the power semiconductor device 300 is constituted by a rectangular (plate-shaped) fin 3 b having a gap 3 c. By configuring the cooling fin 3 in this way, the refrigerant can also flow through the gap 3c. Therefore, the contact area of ​​the refrigerant with the rectangular fin 3b becomes larger, and the heat radiation efficiency by the cooling fin 3 can be further improved.

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Abstract

The purpose of the present invention is to provide a power semiconductor device which has a light weight, high heat dissipation efficiency, and high rigidity. The power semiconductor device including a base 1, semiconductor circuits 2 which are arranged on the base 1, and a cooling fin 3 which cools each of the semiconductor circuits 2, in which one or more protruding portions 1a, 1b are formed on the base 1, widths of the protruding portions 1a, 1b in a direction parallel to the base 1 surface being longer than a thickness of the base 1, thereby providing power semiconductor devices 100, 200, 300, 400 which have a light weight, high heat dissipation efficiency, and high rigidity.

Description

technical field [0001] The present invention relates to power semiconductor devices. Background technique [0002] Semiconductor devices having semiconductor circuits are commonly used. Among them, a power semiconductor device having a power semiconductor circuit is used for the control of electric equipment such as a large-output motor or a generator, or for power conversion. As such a power semiconductor device, an IGBT (Insulated Gate Bipolar Transistor) is mentioned, for example. [0003] In recent years, demand for power semiconductor devices has increased as power control devices mounted on ships, railways, electric vehicles, hybrid electric vehicles, and the like. Therefore, power semiconductor devices are not only required to increase efficiency and increase capacity as electric power equipment, but also require weight reduction and the like as components for vehicles. To meet such demands, techniques described in Patent Documents 1 to 4 are known as techniques fo...

Claims

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Application Information

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IPC IPC(8): H01L23/367
CPCH01L23/34H01L23/42H01L2224/48137H01L2224/48091H01L2224/73265H01L2924/19107H01L2924/13055H01L2924/1305H01L23/473H01L23/3735H01L23/49811H01L23/24H01L23/562H01L2924/00014H01L2924/00
Inventor 春别府佑串间宇幸根本康宏堀内敬介谷江尚史
Owner HITACHI POWER SEMICON DEVICE
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