Ultraviolet semiconductor light emitting device

Abstract

The present invention provides an ultraviolet semiconductor light-emitting device, which comprises: a first conductive semiconductor layer; an active layer under the first conductive semiconductor layer; a first reflective layer under the active layer; and a the second conductive semiconductor layer. The first reflective layer includes a plurality of compound semiconductor layers. The compound semiconductor layer includes at least two semiconductor materials. The contents of the at least two semiconductor materials are different from each other.

Description

technical field [0001] This application claims priority under 35 U.S.C. §119(a) to Korean Patent Application No. 10-2011-0124452 filed on Nov. 25, 2011, the entire contents of which are incorporated herein by reference. Background technique [0002] The present disclosure relates to ultraviolet semiconductor light emitting devices. Light emitting diodes (LEDs) are semiconductor light emitting devices that convert electrical current into light. [0003] Since semiconductor light emitting devices can obtain light with high luminance, semiconductor light emitting devices have been widely used as light sources for displays, light sources for vehicles, and light sources for lighting. [0004] Recently, ultraviolet semiconductor light emitting devices capable of outputting ultraviolet light have been proposed. [0005] However, the ultraviolet light is absorbed into the interior of the ultraviolet semiconductor light emitting device, so that the quantum efficiency is reduced. ...

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[0005] However, ultraviolet light is absorbed into the interior of the ultraviolet semiconductor light-emitting device, reducing the quantum efficiency

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