Light-emitting diode with diamond-like layer, its production method and application

Abstract

A light emitting diode having a DLC (diamond-like carbon) layer comprises: a substrate; a semiconductor epitaxial multilayer composite structure; an insulating diamond layer; a first electrode; and a second electrode. The semiconductor epitaxial multilayer composite structure is disposed on the substrate, and includes a first semiconductor epitaxial layer and a second semiconductor epitaxial layer, wherein the first semiconductor epitaxial layer and the second semiconductor epitaxial layer are arranged in a laminated manner. The insulating diamond layer covers a part of the surface of the semiconductor epitaxial multilayer composite structure. The first electrode is electrically connected with the first semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure. The second electrode is electrically connected with the second semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure. The invention also discloses a method for manufacturing the light emitting diode and application thereof.

Description

technical field [0001] The present invention relates to a light-emitting diode and its manufacturing method and application, especially to a light-emitting diode with a diamond-like carbon (DLC) layer, its manufacturing method and its packaging structure on a chip board (chiponboard, COB). application. Background technique [0002] Since the 1960s, the advantages of low power consumption and long-lasting luminescence of light-emitting diodes have gradually replaced the use of lights or light sources for lighting or various electrical equipment in daily life. What's more, LEDs are developing towards multi-color and high brightness, and have been applied in large outdoor display billboards or traffic signals. [0003] The two electrodes of a light emitting diode (Light Emitting Diode, LED) can be located on the same side or opposite sides of the chip, the former is called a horizontal light emitting diode, and the latter is called a straight light emitting diode. When the cu...

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Problems solved by technology

[0005] However, when the encapsulation layer 18 is directly disposed on the surfaces of the semiconductor epitaxial layer 14, the first electrode 12, and the second electrode 16, due to the poor adhesion between the encapsulation layer 18 and the semiconductor epitaxial layer 14, the overall light emitting diode Poor heat dissipation

In addition, the coefficient of thermal expansion (CTE) of each layer of the LED varies greatly, so when heat accumulates in the LED, it is easier to cause the layers of the LED to expand and deform due to temperature rise, reducing the light emission of the LED. Efficiency and life

Moreover, when the light-emitting diode is further packaged on the circuit carrier, it is more likely to cause electrical connection damage, short circuit or failure due to thermal expansion due to the difference in thermal expansion coefficient between the circuit carrier and the light-emitting diode.

[0006] Therefore, there is an urgent need for a new light-emitting diode technology in this field, which can increase the heat dissipation efficiency of light-emitting diodes, and then improve the original problems of light-emitting diodes with poor luminous efficiency and lifespan.

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