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Substrate processing apparatus, substrate processing method and storage medium

A technology of a substrate processing device and a substrate processing method, which is applied to chemical instruments and methods, cleaning methods and utensils, cleaning methods using liquids, etc., can solve problems such as substrate pollution, foreign matter, gas, etc., and achieve the effect of keeping the environment clean

Active Publication Date: 2013-06-19
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Here, in the case where a first chemical liquid discharge port and a second chemical liquid discharge port are provided on one nozzle as in the case of the above-mentioned Patent Document 1, it is conceivable that the first chemical liquid ejected from the substrate bounces or splashes. The chemical solution adheres to the second chemical solution discharge port, or the second chemical solution bounced or splashed from the substrate adheres to the first chemical solution discharge port, causing the first chemical solution and the second chemical solution to mix
It is conceivable that if different types of chemical solutions are mixed in this way, foreign matter and gas will be generated due to chemical reactions, and the substrate will be contaminated

Method used

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  • Substrate processing apparatus, substrate processing method and storage medium
  • Substrate processing apparatus, substrate processing method and storage medium
  • Substrate processing apparatus, substrate processing method and storage medium

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Embodiment Construction

[0023] Below, refer to Figure 1 to Figure 10 Embodiments of the present invention will be described. Here, a substrate processing apparatus 1 for performing liquid processing on a semiconductor wafer (hereinafter, simply referred to as “wafer”) W that is a circular substrate will be described.

[0024] On the wafer W processed by the substrate processing apparatus 1 of the present embodiment, a film made of, for example, SiN is formed, and the film is formed continuously from the upper surface of the wafer W to the wafer W through the side end portion of the wafer W. The peripheral edge of the lower surface side of W. Here, the substrate processing apparatus 1 is configured to remove, among the films formed on the wafer W, the film located at the peripheral portion of the wafer W by supplying the wafer W with at least two different chemical solutions. First, refer to figure 1 , the substrate processing system 100 including such a substrate processing apparatus 1 will be de...

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Abstract

Provided is a substrate processing apparatus including a substrate holding unit configured to hold a wafer W horizontally, a rotation driving unit configured to rotate the substrate holding unit, a first chemical liquid nozzle configured to discharge a first chemical liquid to a first chemical liquid supplying position on the peripheral portion of the wafer W, and a second chemical liquid nozzle configured to discharge a second chemical liquid to a second chemical liquid supplying position on the peripheral portion of the wafer W. The rotation driving unit rotates the substrate holding unit in a first rotation direction when the first chemical liquid nozzle discharges the first chemical liquid, and rotates the substrate holding unit in a second rotation direction when the second chemical liquid nozzle discharges the second chemical liquid.

Description

technical field [0001] The present invention relates to a substrate processing apparatus and a substrate processing method for liquid processing a substrate with a chemical solution while rotating a horizontally held substrate. Background technique [0002] The manufacturing process of a semiconductor device includes a one-piece liquid processing step of supplying various chemical liquids to the surface of the substrate to be processed while rotating the substrate while holding the substrate freely rotatable about a vertical axis. In such liquid treatment using a chemical solution, different chemical solutions can be appropriately selected and used according to the purpose of treatment. [0003] For example, Patent Document 1 proposes a substrate processing apparatus having a nozzle including a first chemical liquid ejection port for ejecting a first chemical liquid toward the peripheral portion of the substrate and a nozzle for ejecting the second chemical liquid toward the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/02
CPCH01L21/67051H01L21/302B08B3/04
Inventor 天野嘉文
Owner TOKYO ELECTRON LTD
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