Check patentability & draft patents in minutes with Patsnap Eureka AI!

Constant vgs switch

A switching circuit and power supply voltage technology, applied in the field of constant gate to source voltage VGS switching, can solve the problem of limiting the effective dynamic range of the 874 patent

Active Publication Date: 2013-06-26
FAIRCHILD SEMICON SUZHOU +1
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

V gs A change in R can be changed ON , and thus limits the effective dynamic range of the '874 patent

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Constant vgs switch

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0022] In Example 1, a switching circuit (e.g., a switching circuit defining an on state and an off state), in the on state, the switching circuit couples a first node to a second node, and in the off state, the switch The circuit isolates the first node from the second node, and the switching circuit may include: a first field effect transistor (FET) configured to couple the first node to the second node when in an on state; and a power supply, which is A first supply voltage is configured to control the FET, and wherein a reference voltage of the supply is coupled to the potential well of the FET to maintain a gate-to-source voltage of the FET constant during turn-on.

[0023] In example 2, the switching circuit of claim 1 optionally includes a second FET coupled to the first node; a third FET coupled to the second node; and wherein the second FET and the third FET are It is configured to couple a reference voltage of the power supply to the first node and the second node du...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This document discusses, among other things, a signal switch circuit including a first field effect transistor (FET) configured to couple a first node to a second node in an on-state and a charge pump circuit configured to provide a first supply voltage to control the FET, wherein a reference voltage of the charge pump circuit is coupled to a well of the FET to maintain a constant gate to source voltage of the FET during the on-state.

Description

technical field [0001] The present application relates generally to semiconductor switches, and more particularly, to constant gate-to-source voltage VGS switches. Background technique [0002] Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices can be used as switches for coupling electrical signals. Typically, MOSFET switches exhibit little or no offset voltage that can be found in bipolar switches or other solid-state switches. Typically, the on-resistance (R on ) is low, and the open circuit resistance (R off ) is very high. In modern devices, R on can be used on the order of ohms, and R off It can be many megaohms. In a MOSFET switch, R on can be the gate-to-source voltage of the device (V gs )The function. due to R on is V gs function, then under the same conditions, if V gs is a constant, then R ON Of course it is also a constant. When this type of switching device is used for audio signals, if R on As the input signal voltage level varie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/16
CPCH03K17/145H03K2217/0054H03K17/6874H03K2217/0018
Inventor 科奈斯·P·斯诺登
Owner FAIRCHILD SEMICON SUZHOU
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com