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Semiconductor laser device

A laser device and semiconductor technology, applied in the laser field, can solve the problem of insufficient brightness of the laser beam, achieve the effect of improving the quality of the outgoing beam and simple device

Active Publication Date: 2013-07-10
WENZHOU FIBER LASER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The invention provides a semiconductor laser device, aiming to solve the problem that the brightness of the laser beam generated by the semiconductor laser device in the prior art is not high enough

Method used

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  • Semiconductor laser device
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Embodiment 1

[0044] Embodiment 1 of the present invention provides a single-array semiconductor laser device.

[0045] There are mainly two types of methods to improve the brightness of semiconductor laser arrays: coherent superposition and incoherent superposition: the essence of coherent superposition is the superposition of light wave amplitude, which can effectively improve the beam quality of the output beam of semiconductor laser array, but it requires the phase synchronization lock of each superimposed sub-light source , the technical difficulty is relatively large, and it is not easy to obtain high-power in-phase stable output; incoherent superposition is the superposition of light intensity, such as beam shaping method, polarization superposition method and wavelength superposition method, but it is difficult to obtain high brightness by incoherent superposition laser beam with limited improvements to beam quality. The brightness of the laser is proportional to the optical power a...

Embodiment 2

[0056] Embodiment 2 of the present invention provides a multi-array semiconductor laser device.

[0057] Please refer to Figure 5 As shown, it is a schematic structural diagram of the multi-array semiconductor laser device provided by Embodiment 2 of the present invention. In the figure, the semiconductor laser stack formed by 3 semiconductor laser arrays is used as an example to illustrate the structural composition of the whole device, but the number of arrays of the semiconductor laser device provided by the present invention is not limited to 3, it can be several, such as 2, 4 1, 5 or more, not listed here. The structure and principle of a single array have been described in detail in Embodiment 1, and will not be repeated here.

[0058] Please refer to Figure 5 As shown, the semiconductor laser device includes 3 semiconductor laser arrays 100, a semiconductor laser stack 10 is formed by the 3 semiconductor laser arrays 100, each semiconductor laser array 100 includes...

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Abstract

The invention relates to the technical field of laser technology and provides a semiconductor laser device which comprises semiconductor laser arrays, fast axle collimating lenses, a varied lattice spacing diffraction grating and a reflecting mirror. The semiconductor laser arrays, the fast axle collimating lenses, the varied lattice spacing diffraction grating and the reflecting mirror are arranged in sequence along a light path. Each semiconductor laser array comprises at least two laser emitting units. Laser emitted from the laser emitting units is subjected to collimation of the fast axle collimating lenses and then is shot on the varied lattice spacing diffraction grating. The laser is subjected to diffraction of the varied lattice spacing diffraction grating to form parallel light, and then the parallel light is shot on the reflecting mirror with 1%-15% of reflectivity. The reflecting mirror is arranged perpendicular to the diffracted parallel light. The diffracted parallel light is subjected to transmission of the reflecting mirror to emit laser beams with ultrahigh brightness. The semiconductor laser device can be used for supplying the laser beams with ultrahigh brightness, and is integrally simple, stable and reliable.

Description

【Technical field】 [0001] The invention relates to the field of laser technology, in particular to a semiconductor laser device. 【Background technique】 [0002] High-power semiconductor laser devices have the advantages of high electro-optical conversion efficiency, small size, high reliability and long life, and have extremely important application values ​​in many fields such as industrial processing, biomedicine, and national defense. With the development of semiconductor laser technology, the output power of a single-array semiconductor laser (LDA, Laser Diode Array) has reached the kilowatt level, and the electro-optical conversion efficiency can reach more than 60%. However, the waveguide structure of semiconductor lasers leads to poor beam quality, the optical parameters in the fast and slow axis directions are positively unbalanced, the fast axis direction is close to the diffraction limit, and the beam quality in the slow axis direction is extremely poor, which serio...

Claims

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Application Information

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IPC IPC(8): H01S5/40H01S5/06G02B27/10
Inventor 余勤跃樊仲维扈金富
Owner WENZHOU FIBER LASER