Source follower based on deep n-well nmos transistor

Abstract

The invention provides a source electrode follower based on a deep N-well N-channel metal oxide semiconductor (NMOS) transistor, and belongs to the technical filed of source followers. The source electrode follower comprises a current source and the deep N-well NMOS transistor which is used as an input component, wherein a body end of the deep N-well NMOS transistor is connected with an input end (Vin) of the source electrode follower, and so that a voltage (Vsb) between a source electrode of the deep N-well NMOS transistor and the body end of the deep N-well NMOS transistor is basically maintained to be constant under the situation that an input signal is changed. The source electrode follower based on the deep N-well NMOS transistor is small in distortion, good in linearity, and particularly suitable for the application in high-speed heavy load occasions.

Description

technical field [0001] The invention belongs to the field of source follower technology, and relates to a source follower based on a deep N-well NMOS transistor. Background technique [0002] Source followers based on MOS devices (that is, MOSFETs, that is, MOS transistors) are widely used in various functional circuits. For example, the source follower can usually be used as a high-speed input buffer, its circuit structure is simple, the source follower can provide high input impedance, low output impedance and wide signal bandwidth; compared with the operational amplifier based on closed-loop drive, the source follower There are no stability issues with the device. Therefore, source followers are well suited for buffer and driver circuits. [0003] figure 1 Shown is a schematic diagram of a standard NMOS transistor, where (a) is a schematic diagram of its cross-sectional structure, and (b) is a schematic diagram of its equivalent circuit. figure 2 shown based on figu...

AI Technical Summary

Problems solved by technology

[0010] To avoid the linear distortion caused by the voltage-dependent body effect, a source follower based on a deep N-well NMOS transistor was further proposed, but this source follower did not consider the parasitic capacitance in the deep N-well NMOS transistor at high frequency The impact on its high-frequency dynamic distortion performance during application, usually, dynamic distortion is prone to occur in high-frequency or high-speed applications

Images