Processing technic of sapphire substrate slice special for patterned substrate

A patterned substrate and processing technology, applied in metal processing equipment, manufacturing tools, grinding devices, etc., can solve the problems of information blocking, low production efficiency, easy deformation and warping, etc., to achieve industrialization and improve The effect of improving processing efficiency and production efficiency

Inactive Publication Date: 2013-07-24
JIANGSU KERUN PHOTOELECTRIC TECH CO LTD
View PDF5 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, the existence of technical barriers and the high degree of immaturity of the market have formed a blockage of information, resulting in the lack of a detailed standardized process for sapphire substrates in the industry, resulting in a high rate of defective sapphire substrates in the industry and low production efficiency.
At present, the parameters of the sapphire substrates produced in the industry are the back surface roughness range of 0.80μm~1.20μm, the front surface roughness≤0.30nm, the total thickness deviation TTV≤5.00μm, the warp warp≤10.00μm, and the bow≤30.00 μm, the accuracy of the back roughness, warpage, and curvature is low, which leads to easy deformation and warping in the subsequent manufacturing process of patterned substrates using sapphire substrates
[0003] In addition, at present, in the process of processing sapphire substrates for patterned substrates in the industry, at least one double-sided grinding machine / polishing machine and one single-sided polishing machine / polishing machine are required, which not only requires high equipment investment, but also increases maintenance. cost and cost of use

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Processing technic of sapphire substrate slice special for patterned substrate
  • Processing technic of sapphire substrate slice special for patterned substrate
  • Processing technic of sapphire substrate slice special for patterned substrate

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0066] figure 1 It is a schematic structural diagram of the double-sided polishing machine used in this embodiment.

[0067] Detect the cut sapphire substrate, classify according to size after passing the test, and then perform the following steps:

[0068] A chamfering: the edge of the sapphire substrate is trimmed into an arc shape to improve the mechanical strength of the edge of the sheet and avoid defects caused by stress concentration;

[0069] B carries out double-sided coarse grinding to the sapphire substrate sheet: paste a silicon carbide sheet of the same size and specification as W180 on the upper and lower grinding disc 5 surfaces of the double-sided polishing machine; figure 2 As shown, on the lower grinding disc 5 of the double-sided polishing machine, the intermeshing inner ring gear 1, the external tooth sun gear 4 and five planetary discs 2 with external teeth are installed, and each planetary disc 2 has a Five through holes 3, put the sapphire substrate i...

no. 2 example

[0107] Except the F annealing step, other operating steps and parameters are the same as the first embodiment, and the annealing steps are as follows:

[0108] F carries out annealing to sapphire substrate piece, comprises the following steps:

[0109] F1 Put the sapphire substrate sheet vertically into the electric heating furnace and fix it;

[0110] F2 heating up for the first time: the electric heating furnace is heated up to 400°C, and the temperature is kept constant for 20 minutes;

[0111] F3 heating up for the second time: the electric heating furnace is heated up to 800°C, and the temperature is kept constant for 20 minutes;

[0112] F4 heating up for the third time: the electric heating furnace is heated to 1200°C, and the temperature is kept constant for 90 minutes;

[0113] The first cooling of F5: the electric heating furnace is cooled to 800°C, and the temperature is kept constant for 20 minutes;

[0114]The second cooling of F6: the electric heating furnace ...

no. 3 example

[0119] Except the F annealing step, other operating steps and parameters are the same as the first embodiment, and the annealing steps are as follows:

[0120] F carries out annealing to sapphire substrate piece, comprises the following steps:

[0121] F1 Put the sapphire substrate sheet vertically into the electric heating furnace and fix it;

[0122] F2 heating up for the first time: the electric heating furnace is heated up to 400°C, and the temperature is kept constant for 30 minutes;

[0123] F3 heating up for the second time: the electric heating furnace is heated up to 800°C, and the temperature is kept constant for 30 minutes;

[0124] F4 heating up for the third time: the electric heating furnace is heated to 1280°C, and the temperature is kept constant for 120 minutes;

[0125] The first cooling of F5: the electric heating furnace is cooled to 800°C, and the temperature is kept constant for 30 minutes;

[0126] The second cooling of F6: the electric heating furnac...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thermal resistanceaaaaaaaaaa
Login to view more

Abstract

The invention discloses a processing technic of a sapphire substrate slice special for a patterned substrate. The processing technic comprises the following steps: A, chamfering; B, performing two-sided rough grinding on the sapphire substrate slice by using boron carbide of which the specification is W14-W20; C, cleaning the sapphire substrate slice by using an ultrasonic wave cleaning machine; D, performing two-sided fine grinding on the sapphire substrate slice by using boron carbide of which the specification is W5-W7; E, cleaning the sapphire substrate slice by using the ultrasonic wave cleaning machine; F, annealing the sapphire substrate slice; G, performing single-sided grinding on the front side of the sapphire substrate slice; H, cleaning the sapphire substrate slice by using the ultrasonic wave cleaning machine; I, preforming the single-sided rough polishing on the front side of the sapphire substrate slice; J, performing single-side fine polishing on the front side of the sapphire substrate slice; and K, cleaning the sapphire substrate slice by using the ultrasonic wave cleaning machine. Due to the adoption of the processing technic, all grinding and polishing processes in the machining process of the sapphire substrate slice special for the patterned substrate can be performed on a two-sided grinding-polishing machine, and the processing accuracy of a product is increased.

Description

technical field [0001] The invention relates to a processing technology of a crystal material, in particular to a processing technology of a sapphire substrate. Background technique [0002] LED lighting is the focus of a new round of high-tech high-tech enterprise development. Graphical sapphire substrates can effectively increase the brightness of LED chips and increase light efficiency by more than 30%. With the increase in demand for high-power LED chips, the demand for patterned sapphire substrates has also increased significantly. Therefore, the processing of sapphire substrates for patterned substrates is a very important link in the entire LED industry chain, and mature production technology is particularly critical. However, at present, the existence of technical barriers and the immaturity of the market have formed a blockage of information, resulting in the lack of a detailed standardized process for sapphire substrates in the industry, resulting in a high rate o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/07
Inventor 张卫兴
Owner JIANGSU KERUN PHOTOELECTRIC TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products