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Composite dummy gate with conformal polysilicon layer for FinFET device

A polysilicon layer and device technology, applied in the field of composite dummy gates, can solve problems such as unsatisfactory and bad gate combinations

Active Publication Date: 2013-07-24
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conventional processes used to fabricate the gates of FinFET devices can result in poor gate combinations
[0004] Thus, while existing methods of fabricating FinFET devices have been generally adequate for their intended purposes, they have not been entirely satisfactory in every respect

Method used

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  • Composite dummy gate with conformal polysilicon layer for FinFET device
  • Composite dummy gate with conformal polysilicon layer for FinFET device
  • Composite dummy gate with conformal polysilicon layer for FinFET device

Examples

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Embodiment Construction

[0028] It should be appreciated that the following disclosure provides many different embodiments, or examples, for implementing different components of the various embodiments. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course these are merely examples and are not intended to be limiting. For example, the following description of a first component being formed on a second component may include embodiments in which the first and second components are formed in direct contact, and may also include embodiments in which additional components are formed between the first and second components Between embodiments such that the first part and the second part are not in direct contact. Additionally, the terms "top," "bottom," "below," "above," etc., are used for convenience and are not intended to limit the scope of the embodiments to any particular orientation. Various features may be arbitrarily drawn in different s...

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PUM

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Abstract

The present disclosure involves a FinFET. The FinFET includes a fin structure formed over a substrate. A gate dielectric layer is least partially wrapped around a segment of the fin structure. The gate dielectric layer contains a high-k gate dielectric material. The FinFET includes a polysilicon layer conformally formed on the gate dielectric layer. The FinFET includes a metal gate electrode layer formed over the polysilicon layer. The present disclosure provides a method of fabricating a FinFET. The method includes providing a fin structure containing a semiconductor material. The method includes forming a gate dielectric layer over the fin structure, the gate dielectric layer being at least partially wrapped around the fin structure. The method includes forming a polysilicon layer over the gate dielectric layer, wherein the polysilicon layer is formed in a conformal manner. The method includes forming a dummy gate layer over the polysilicon layer.

Description

technical field [0001] The invention relates to a composite dummy gate for FinFET devices. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid development. Technological advances in IC materials and design have produced generations of ICs, each of which has smaller and more complex circuits than the previous generation. However, these advances have increased the complexity of processing and producing ICs, and thus, in order to realize these advances, similar developments in IC processing and production are required. During the development of integrated circuits, functional density (ie, the number of interconnected devices per chip area) has increased substantially while geometry size (ie, the smallest component (or line) that can be made using a fabrication process) has decreased. [0003] As this scaling progress occurs, challenges from manufacturing and design issues have led to the development of three-dimensional desig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/423H01L29/78H01L21/28H01L21/336
CPCH01L21/28H01L29/785H01L29/78H01L29/66795H01L27/0924H01L29/423H01L21/823821H01L21/823842H01L21/823807H01L21/823828H01L29/0649H01L29/66545
Inventor 黄渊圣解子颜张铭庆陈昭成陈嘉仁
Owner TAIWAN SEMICON MFG CO LTD