Semiconductor structure and method for preparation of TEM (transmission electron microscope) samples
A semiconductor and sample technology, used in the preparation of semiconductor devices, test samples, semiconductor/solid-state device components, etc., can solve the problems of uneven distribution, no solution, inaccurate determination of the position of the test structure, etc., to improve the accuracy speed and speed, the effect of accurate sample preparation
Active Publication Date: 2013-09-04
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology
The TEM sample preparation method disclosed in this patent is mainly to avoid the problem of the thickness of the TEM sample caused by the energy loss and uneven distribution of the focused ion beam caused by the distance between the target structure and the sample surface, but it does not involve how to avoid the above-mentioned hypothetical Improvement measures for the problem that the structure blocks the test structure, which leads to inaccurate determination of the position of the test structure during sample preparation
[0007] It can be seen that there is no effective solution in the industry for the above-mentioned problems existing in the prior art at present
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[0031] The invention provides a method for preventing silicon damage in a semiconductor device processing technology, in particular a method for preventing silicon surface damage in a high-energy implantation region. The present invention can be used in processes whose technology nodes are less than 22nm, 32 / 28nm, 45 / 40nm, 65 / 55nm, 90nm and greater than 130nm; the present invention can be used in Logic, Memory, RF, HV, Analog / Power, MEMS, CIS, Flash, eFlash and other technology platforms.
[0032] The invention provides a semiconductor structure, especially a semiconductor structure applied in a TEM sample preparation process.
[0033] Next, the semiconductor structure in the present invention will be described.
[0034] The semiconductor structure includes a substrate, a test layer is arranged on the substrate, and a replication layer is also arranged on the test layer.
[0035] The test layer includes the test structures that need to be prepared for TEM samples and the res...
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The invention relates to a semiconductor structure and a method for the preparation of TEM samples, wherein the semiconductor structure comprises a substrate, moreover, a test layer is arranged on the substrate, and comprises a test structure, and the semiconductor structure also comprises a copy layer, which comprises a copy structure; the copy structure is located upon the test structure, and the upper surface patterns of the copy structure and the test structure are the same. The method includes the following steps: the semiconductor structure is adopted to prepare a TEM sample, and is lapped until the upper surface of the copy layer; and according to the pattern structure of the upper surface of the copy layer, the TEM sample of the test structure is prepared. The invention can increase the efficiency and effect of TEM sample preparation.
Description
technical field [0001] The invention relates to a semiconductor process method and structure, in particular to a semiconductor structure and method for preparing TEM samples. Background technique [0002] In the manufacturing process of semiconductor devices, it is often necessary to carry out various tests to reflect problems in the manufacturing process or design process of semiconductor devices, so as to take timely measures. TEM is an important tool in the detection process. Transmission electron microscope (TEM for short), referred to as transmission electron microscope, works by projecting an accelerated and concentrated electron beam onto a very thin sample. The electrons and atoms in the sample The collision changes direction, resulting in solid angle scattering. The size of the scattering angle is related to the density and thickness of the sample, so it can form different effects of light and dark. Usually, the resolution of the electron microscope is 0.1-0.2nm, ...
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IPC IPC(8): H01L23/544G01N1/28
Inventor 陈强孙凤勤
Owner SHANGHAI HUALI MICROELECTRONICS CORP