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Light-emitting diode chip and manufacturing method thereof

A technology of light-emitting diodes and manufacturing methods, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of low brightness of light-emitting diode chips, and achieve the effect of improving light extraction efficiency and brightness

Active Publication Date: 2017-04-19
EPILIGHT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a light-emitting diode chip and its manufacturing method, which is used to solve the problem of low brightness of the light-emitting diode chip in the prior art

Method used

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  • Light-emitting diode chip and manufacturing method thereof
  • Light-emitting diode chip and manufacturing method thereof
  • Light-emitting diode chip and manufacturing method thereof

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Embodiment 1

[0049] see Figure 1 to Figure 8 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementation, and the component layout type may also be more complicated.

[0050]The invention provides a method for manufacturing a light-emitting diode chip, which at least includes the following steps:

[0051] Step 1), see figure 1 , providing a substrate 1, the substrate sequentially includes a substrate 11, an N-type semiconductor layer 12, a light emitting layer 13 and a P-type semiconductor layer 14 from bottom to top;

[0052] Specifically, the substrate 11 may be a sapphire substrate, or other semiconductor su...

Embodiment 2

[0068] see Figure 8 , this embodiment adopts basically the same scheme as that of Embodiment 1, the difference lies in that the setting of the light reflection layer is different. In the first embodiment, only the bottom area of ​​the P electrode and the N electrode is provided with a light reflection layer, and in this embodiment, the bottom area of ​​the P electrode, the N electrode, the P electrode lead and the N electrode lead are all provided with a light reflection layer, which can be further improved. Improve the light extraction efficiency of the chip.

[0069] The invention provides a method for manufacturing a light-emitting diode chip, which at least includes the following steps:

[0070] Step 1), providing a substrate 1, the substrate sequentially includes a substrate 11, an N-type semiconductor layer 12, a light emitting layer 13 and a P-type semiconductor layer 14 from bottom to top;

[0071] Specifically, the substrate 11 may be a sapphire substrate, or other...

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Abstract

The invention provides an LED (Light Emitting Diode) chip and a manufacturing method thereof. The manufacturing method is characterized by firstly preparing a substrate by adopting Mesa corrosion, then depositing a light reflecting layer, etching the light reflecting layer, forming a P electrode area light reflecting layer and a P electrode leading wire area light reflecting layer on a P-type semiconductor layer and forming an N electrode area light reflecting layer and an N electrode leading wire area light reflecting layer on an N-type semiconductor layer in a sunken area, and then carrying out annealing treatment; and finally manufacturing a transparent electrode, a P electrode, an N electrode, a P electrode leading wire and an N electrode leading wire. According to the LED chip and the manufacturing method of the LED chip, which are provided by the invention, bottom areas of the P electrode, the N electrode, the P electrode leading wire and the N electrode leading wire are provided with light reflecting layers, light from a light emitting layer to electrode areas can be reflected back by the light reflecting layers and can be then transmitted after being conducted to other areas, the light transmitted to the electrode areas can be prevented from being absorbed by electrodes and electrode leading wires, thus the light emitting efficiency of an LED is increased, and the brightness of the LED chip is increased.

Description

technical field [0001] The invention belongs to the field of semiconductor light-emitting devices, and relates to a light-emitting diode chip and a manufacturing method thereof. Background technique [0002] A light emitting diode (Light Emitting Diode, LED) is an electronic device that converts electrical energy into light energy. By using different compound semiconductor materials, its wavelength can cover the entire visible light region and part of the infrared and ultraviolet bands. LED has the advantages of energy saving, green environmental protection, long life, light weight, small size, high efficiency, vibration resistance, fast response time, bright color and excellent recognition, and has a wide range of applications in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power light-emitting diodes may realize semiconductor solid-state lighting, which has caused a revolution in the history of human lighting, and has grad...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/46H01L33/38
Inventor 郝茂盛袁根如陈诚陶淳朱广敏张楠杨杰
Owner EPILIGHT TECH