Storage device
A storage device and energy storage device technology, applied in the direction of instruments, electrical digital data processing, etc., can solve the problems of increasing waste of resources, increasing the capacity or bandwidth of volatile memory and non-volatile memory, increasing the economic burden of users, etc. Achieve the effect of reducing waste and improving convenience
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Embodiment 1
[0042] Please refer to figure 1 as well as Figure 7 to Figure 9 ,as well as Figure 11 The first specific implementation manner of a storage device of the present invention is shown.
[0043] In this embodiment, a storage device 100 includes:
[0044] The first printed circuit board 10 has a controller 101, four first storage elements 102 electrically connected with the controller 101 and four multiplexers (MUX) 103, and the multiplexer The device 103 is electrically connected to the first interface 104 and the second interface 105 respectively.
[0045] Specifically, the controller 101 is electrically connected to four first storage elements 102 in parallel, and the controller 101 is electrically connected to four multiplexers (MUX) 103 in parallel.
[0046] The controller 101 is an FPGA-based chip or an ASIC with logic control functions.
[0047] Specifically, the multiplexer (MUX) 103 is a high-speed signal switching device, which has a plurality of high-speed electro...
Embodiment 2
[0060] Please refer to figure 2 , Figure 10 , Figure 12 and Figure 13 Another specific embodiment of a storage device of the present invention is shown.
[0061] Compared with the first embodiment, the main difference of this embodiment is that the storage device 100 also includes a first expansion port 110 provided on the first printed circuit board 10, and the first expansion port 110 is connected to the controller 101 electrical connection.
[0062] In this embodiment, the first expansion port 110 is a high-speed interface (HSTC), and the first expansion interface 110 includes a data pin 1101 and a power pin 1102, which are used to electrically connect a plurality of flash memory 1021 in parallel. figure 2 The first storage element 102 in is the same type of non-volatile memory; preferably, the flash memory 1021 is NAND.
[0063] Through this setting, the user can arbitrarily increase the number of parallel data read-write channels formed by the first storage elem...
Embodiment 3
[0066] Please refer to image 3 and Figure 10 Another specific embodiment of a storage device of the present invention is shown.
[0067] Compared with the specific implementation shown in the second embodiment, the main difference of this embodiment is that the first expansion port 110 is electrically connected to the first interface 104 and used to connect to several DRAMs (Dynamic Random Access Memory) 2011 .
[0068] In this embodiment, the capacity of the second storage element 201 and the bandwidth of the second storage element 201 can be increased through the first expansion port 110 , thereby improving the performance of the storage device 100 .
[0069] With the continuous improvement of the manufacturing process level of dynamic random access memory (DRAM), the user can only replace the second circuit without replacing the electronic components such as the first circuit board 10 and its electrically connected controller 101. board 20 or by increasing the capacity ...
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