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MOSFET with selective dopant deactivation underneath gate

A dopant and deactivation technology, applied in the field of technology, can solve problems such as threshold voltage changes and device variability

Active Publication Date: 2013-10-23
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Some MOSFET devices suffer from device variability issues such as Random Doping Fluctuation (RDF) and threshold voltage variation

Method used

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  • MOSFET with selective dopant deactivation underneath gate
  • MOSFET with selective dopant deactivation underneath gate
  • MOSFET with selective dopant deactivation underneath gate

Examples

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Embodiment Construction

[0031] The manufacture and use of various embodiments are discussed in detail below. However, it should be understood that the present disclosure provides many applicable inventive ideas that can be implemented in various specific environments. The specific embodiments discussed merely illustrate specific ways to make and use the present invention, and are not intended to limit the scope of the present disclosure.

[0032] In addition, the present disclosure may repeat reference numbers and / or letters in multiple instances. This repetition is used for simplicity and clarity, and does not itself specify the relationship between the various embodiments and / or structures discussed. Also, in the present disclosure, one component is formed on another component, coupled to another component, and / or connected to another component may include embodiments in which the components are formed in direct contact, and may also include It is an embodiment in which the components are not direct...

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Abstract

A method of fabricating a metal-oxide-semiconductor field-effect transistor (MOSFET) device on a substrate includes doping a channel region of the MOSFET device with dopants of a first type. A source and a drain are formed in the substrate with dopants of a second type. Selective dopant deactivation is performed in a region underneath a gate of the MOSFET device.

Description

Technical field [0001] The present disclosure relates to a U.S. application filed on November 3, 2011 under the title "Semiconductor Transistor Device with Optimized Dopant Profile" serial number No. 13 / 288,201 (Agency No. N1085-00884), and its entire contents Incorporated here as a reference. Technical field [0002] The present disclosure relates generally to integrated circuits, and more specifically to metal oxide semiconductor field effect transistors (MOSFETs). Background technique [0003] Some MOSFET devices have device variability issues, such as random doping fluctuations (RDF) and threshold voltage changes. The RDF depends on the channel profile of the device, and the change in the critical dimension of the gate is proportional to the decay slope of the threshold voltage. Reducing the RDF and threshold voltage decay slope will help reduce the overall variability of MOSFET devices. Summary of the invention [0004] In order to solve the defects in the prior art, accord...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/06H01L29/78
CPCH01L29/78H01L29/06H01L21/26506H01L29/66545H01L29/66651H01L29/7833H01L29/1045H01L21/2658H01L29/66537H01L29/1041H01L29/1608
Inventor 马哈维杨凯杰吴伟豪后藤贤一吴志强孙元成
Owner TAIWAN SEMICON MFG CO LTD