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Substrate and method for manufacturing a substrate of at least one power semiconductor device

A technology for power semiconductors and devices, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc. Reliable and effective cooling effect

Inactive Publication Date: 2018-07-10
SEMIKRON ELECTRONICS GMBH & CO KG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to this, a detachment of the connection of the substrate to the heat sink can occur, which can lead to failure or destruction of the power semiconductor device, since the power semiconductor device is no longer sufficiently cooled

Method used

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  • Substrate and method for manufacturing a substrate of at least one power semiconductor device
  • Substrate and method for manufacturing a substrate of at least one power semiconductor device
  • Substrate and method for manufacturing a substrate of at least one power semiconductor device

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Embodiment Construction

[0036] exist figure 1 The substrate blank 7 a is shown in a schematic sectional view after carrying out the first method step according to the invention. In a first method step, a structured first metallization layer 2 a is applied to the first side 15 a of the non-conductive insulating material body 1 and a second metallization layer 2 b is applied to the insulating material of the insulating material body 1 . On the second side 15b opposite to the first side 15a of the main body 1 . The insulating material body 1 is thus arranged between the first metallization layer 2 a and the second metallization layer 2 b. The insulating material body 1 can for example be made of ceramics, such as Al 2 o 3 or AlN, and has a thickness of, for example, 300 μm to 1000 μm. Metallization layers 2 a and 2 b can, for example, consist essentially of copper and / or silver or of copper alloys and / or silver alloys. The metallization layers 2 a and 2 b preferably have a thickness of 5 μm to 25 μ...

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PUM

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Abstract

The invention relates to a substrate and a method for producing a substrate of at least one power semiconductor component. A substrate with a first and a second metallization layer (2a, 2b), the method having the method steps of: a) producing a non-conductive insulating material body (1); b) applying the second metallization layer to the insulating material body (1) on the second side (15b) opposite the first side (15a) of the insulating material body (1); c) applying a non-conductive varnish layer (3) to the second metallization layer, the varnish The layer ( 3 ) has recesses ( 13 ); d) on the second metallization layer, the protrusions ( 6 , 6 ′) are electrodeposited at the locations where the lacquer layer ( 3 ) has the recesses ( 13 ). Furthermore, the invention also relates to a substrate (7, 7', 7''). The invention enables reliable cooling of power semiconductor components ( 10 a , 10 b ) arranged on a substrate.

Description

technical field [0001] The invention relates to a method for producing a substrate of at least one power semiconductor component and to a substrate associated therewith. Background technique [0002] Power semiconductor components are used, for example, in particular for the rectification and inversion of voltages and currents, wherein often a plurality of power semiconductor components are electrically connected to one another, for example to realize a converter. The power semiconductor components are usually arranged on a substrate which is usually connected directly or indirectly to the heat sink. [0003] During the operation of power semiconductor devices such as IGBTs (Insulated Gate Bipolar Transistors), MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), thyristors or diodes, there is a loss of energy in the power semiconductor devices in the form of heat, which causes the power semiconductor The device is hot. This heat is transferred from the power semi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/48H01L21/50
CPCH01L23/3735H01L23/36H01L21/4803H01L24/29H01L24/32H01L24/83H01L2224/29111H01L2224/29339H01L2224/32225H01L2224/83447H01L2224/83801H01L2224/8384H01L2924/15311H01L2924/13091H01L2924/1301H01L2924/13055H01L2924/1305H01L25/072H01L2924/00014H01L2924/00H01L23/14H01L23/373
Inventor 库尔特-格奥尔格·贝森德费尔海科·布拉姆尔娜蒂娅·埃德纳克里斯蒂安·约布尔
Owner SEMIKRON ELECTRONICS GMBH & CO KG