Method for developing quantum dot on side wall of GaAs nanowire by utilizing nanoring as mask

A nanowire and nanoring technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of wide half-width of the spectrum, low luminous efficiency of positioning quantum dots, etc., to avoid isolation process, good photoelectric properties, and high repeatability Effect

Inactive Publication Date: 2013-10-23
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Traditional patterned substrates are all realized by electron beam lithography technology, but due to the inevitable mechanical stress non-recomb

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  • Method for developing quantum dot on side wall of GaAs nanowire by utilizing nanoring as mask
  • Method for developing quantum dot on side wall of GaAs nanowire by utilizing nanoring as mask
  • Method for developing quantum dot on side wall of GaAs nanowire by utilizing nanoring as mask

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[0025] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail with reference to specific embodiments and drawings.

[0026] It should be noted that in the drawings or description of the specification, similar or identical parts use the same drawing numbers. The implementations not shown or described in the drawings are those known to those of ordinary skill in the art. In addition, although this article may provide demonstrations of parameters including specific values, it should be understood that the parameters need not be exactly equal to the corresponding values, but can be approximated to the corresponding values ​​within acceptable error tolerances or design constraints. In addition, the directional terms mentioned in the following embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only directions with reference to the drawings. Th...

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Abstract

The invention discloses a method for developing quantum dot on the side wall of GaAs nanowire by utilizing nanoring as a mask. The method comprises the step of taking one semiconductor substrate, the step of developing a silicon dioxide layer on the semiconductor substrate, the step of washing the semiconductor substrate on which the silicon dioxide layer is developed, the step of developing the nanowire on the silicon dioxide layer by adopting the autocatalysis method, wherein the top end of the nanowire is provided with Ga liquid drop, the step of processing and consuming the Ga liquid drop at the top end of the nanowire by adopting high As pressure, and restraining the growth of a VLS on the nanowire at the top end to form a substrate, the step of depositing the Ga liquid drop on the substrate under the environment with low As pressure, the step of combining and crystallizing the As and Ga liquid drop to form the nanoring on the side wall of the nanowire on the substrate in the As environment, and the step of developing the quantum dot and a covering layer by utilizing the nanoring as the mask. By means of the method, the quantum dot is developed on the side wall of the nanowire in an imaging mode for the first time, quantitative control over the number of quantum dots on one nanowire is achieved, and the method has important application prospects on the aspect of a nanowire-based single photon source.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials and devices, and relates to a method for growing quantum dots on the side walls of GaAs nanowires using nanorings as masks. Background technique [0002] In recent years, the use of molecular beam epitaxy to grow III-V nanowires and their nano-optoelectronic devices has become a hot spot in the field of new nano-optoelectronic devices and quantum physics research. Quantum dots and quantum rings have attracted extensive attention due to their unique multi-dimensional confinement effects in terms of optical, electrical and quantum characteristics. Combining quantum dots with nanowires can not only greatly improve the optoelectronic characteristics of nanowires, but also generate novel quantum effect. [0003] Traditional quantum dots are mostly grown by the self-organization method of S-K mode or droplet method, and have been widely used in traditional optoelectronic fields such as ...

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Application Information

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IPC IPC(8): H01L33/30H01L21/20
Inventor 査国伟李密锋喻颖王莉娟徐建星尚向军倪海桥贺振宏牛智川
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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