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Thin-film transistor device and method for manufacturing same, organic electroluminescent display elements and organic electroluminescent display device

A technology of thin-film transistors and components, applied in semiconductor/solid-state device manufacturing, transistors, electric solid-state devices, etc., can solve problems such as poor electrical connections

Active Publication Date: 2013-11-06
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, the TFT device related to the prior art has the following problem: the organic semiconductor layer is formed to the part where the organic semiconductor layer is not desired to be formed (in Figure 15 (a) inside the opening 9016a), poor electrical connection with other elements (such as the light emitting element portion) occurs

Method used

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  • Thin-film transistor device and method for manufacturing same, organic electroluminescent display elements and organic electroluminescent display device
  • Thin-film transistor device and method for manufacturing same, organic electroluminescent display elements and organic electroluminescent display device
  • Thin-film transistor device and method for manufacturing same, organic electroluminescent display elements and organic electroluminescent display device

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Embodiment approach 1

[0127] 1. Overall structure of the organic EL display device 1

[0128] Below, use figure 1 The structure of the organic EL display device 1 according to Embodiment 1 of the present invention will be described.

[0129] Such as figure 1 As shown, the organic EL display device 1 is configured to include an organic EL display panel 10 and a drive control circuit unit 20 connected thereto.

[0130] The organic EL display panel 10 is a panel utilizing the electroluminescence phenomenon of organic materials, and is configured such that a plurality of organic EL elements are arranged in a matrix, for example. The drive control circuit unit 20 includes a control circuit 25 and four drive circuits 21 to 24 .

[0131] In the organic EL display device 1 according to this embodiment, the arrangement of the drive control circuit unit 20 with respect to the organic EL display panel 10 is not limited to this.

[0132] 2. Structure of the organic EL display panel 10

[0133] use fig...

Embodiment approach 2

[0248] use Figure 9 (a) The structure of the TFT substrate according to Embodiment 2 of the present invention will be described. also, Figure 9 (a) is the same as that in Embodiment 1 above image 3 In the corresponding figures, other configurations are the same as those in Embodiment 1 described above, so illustration and description thereof will be omitted.

[0249] Such as Figure 9 As shown in (a), in the TFT substrate according to this embodiment, four openings 2016 a , 2016 b , 2016 c , and 2016 d are defined by the partition wall 2016 . Among them, the connection wirings 2015a and 2015d are arranged at the bottom of the openings 2016a and 2016d, respectively, and do not function as channel parts.

[0250] Furthermore, in this embodiment, if Figure 9 As shown in (a), neither the opening portion 2016a nor the opening portion 2016d functions as a channel portion, but one opening portion, for example, the opening portion 2016d belongs to the TFT element correspondin...

Embodiment approach 3

[0259] use Figure 9 (b) The structure of the TFT substrate according to Embodiment 3 of the present invention will be described. also, Figure 9 (b) is the same as that in Embodiment 1 above image 3 In the corresponding figures, other configurations are the same as those in Embodiments 1 and 2 described above, so illustration and description thereof are omitted.

[0260] Such as Figure 9 As shown in (b), in the TFT substrate according to this embodiment, the partition wall 2116 defines four openings 2116 a , 2116 b , 2116 c , and 2116 d . Among them, the connection wirings 2115a and 2115d are arranged at the bottom of the openings 2116a and 2116d, respectively, and do not function as channel parts.

[0261] Furthermore, in this embodiment, if Figure 9 As shown in (b), neither the opening portion 2116a nor the opening portion 2116d functions as a channel portion, but one opening portion, for example, the opening portion 2116d belongs to the TFT element corresponding to...

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Abstract

Thin-film transistor elements are formed inside first and second openings constituted by partition wall enclosures. A third opening is disposed on the partition wall, adjacent to the first opening with a space therebetween, on the side that differs to the side on which the second opening is adjacent. In a plan view of the bottom of the first opening, the center position of the surface area of a lyophilic layer inside the first opening is further toward the side that differs to the side on which the third opening is adjacent than the center position of the area at the bottom. Furthermore, in a plan view of the bottom of the first opening and the bottom of the second opening, in either the first opening or the second opening, the center position of the surface area of the lyophilic layer of the bottom thereof is further toward the side that differs to the side on which the other opening is adjacent than the center position of the area at the bottom of said opening.

Description

technical field [0001] The invention relates to a thin film transistor device and its manufacturing method, an organic EL display element and an organic EL display device. Background technique [0002] In liquid crystal display panels and organic EL display panels, thin film transistor devices (devices) in which thin film transistor (TFT (Thin Film Transistor)) elements are formed for each sub-pixel are used in order to control light emission on a sub-pixel basis. And, especially, the development of thin film transistor devices using organic semiconductor materials as semiconductor layers has been progressing. [0003] Such as Figure 15 As shown in (a), the organic TFT device related to the prior art, for example, is sequentially stacked on a substrate 9011 with gate electrodes 9012a, 9012b, an insulating layer 9013, source electrodes 9014a, 9014b, drain electrodes (not shown) and an organic semiconductor layer. 9017a, 9017b. The organic semiconductor layers 9017a and 901...

Claims

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Application Information

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IPC IPC(8): H01L21/336G02F1/1368H01L29/786H01L51/05H01L51/50
CPCH01L51/105H01L29/66765H01L2227/323H01L27/283H01L27/1225G02F1/1368H01L27/3274H01L51/0545H01L27/32H01L2251/5315H01L51/0003H01L27/1292H01L27/1214H10K19/10H10K59/125H10K71/12H10K10/84H10K10/466H10K2102/3026H10K59/1201H10K59/00
Inventor 奥本有子宫本明人受田高明
Owner PANASONIC CORP
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