Thin film transistor device and manufacturing method thereof, organic el display element and organic el display device

A technology for thin film transistors and devices, which is applied in the manufacture of semiconductor/solid state devices, transistors, electric solid state devices, etc., and can solve problems such as poor electrical connection

Active Publication Date: 2016-09-28
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, the TFT device related to the prior art has the following problem: the organic semiconductor layer is formed to the part where the organic semiconductor layer is not desired to be formed (in Figure 15 (a) is inside the opening 9016a), and poor electrical connection with other elements (such as the light emitting element portion) occurs.

Method used

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  • Thin film transistor device and manufacturing method thereof, organic el display element and organic el display device
  • Thin film transistor device and manufacturing method thereof, organic el display element and organic el display device
  • Thin film transistor device and manufacturing method thereof, organic el display element and organic el display device

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Experimental program
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Effect test

Embodiment approach 1

[0127] 1. Overall structure of the organic EL display device 1

[0128] Below, use figure 1 The structure of the organic EL display device 1 according to Embodiment 1 of the present invention will be described.

[0129] Such as figure 1 As shown, the organic EL display device 1 is configured to include an organic EL display panel 10 and a drive control circuit unit 20 connected thereto.

[0130] The organic EL display panel 10 is a panel utilizing the electroluminescence phenomenon of organic materials, and is configured such that a plurality of organic EL elements are arranged in a matrix, for example. The drive control circuit unit 20 includes a control circuit 25 and four drive circuits 21 to 24 .

[0131] In the organic EL display device 1 according to this embodiment, the arrangement of the drive control circuit unit 20 with respect to the organic EL display panel 10 is not limited to this.

[0132] 2. Structure of the organic EL display panel 10

[0133] use fig...

Embodiment approach 2

[0248] use Figure 9 (a) The structure of the TFT substrate concerning Embodiment 2 of this invention is demonstrated. also, Figure 9 (a) is the same as in Embodiment 1 above image 3 In the corresponding figures, other configurations are the same as those in Embodiment 1 described above, so illustration and description thereof will be omitted.

[0249] Such as Figure 9 As shown in (a), in the TFT substrate according to this embodiment, four openings 2016 a , 2016 b , 2016 c , and 2016 d are defined by the partition wall 2016 . Among them, the connection wirings 2015a and 2015d are arranged at the bottom of the openings 2016a and 2016d, respectively, and do not function as channel parts.

[0250] Furthermore, in this embodiment, if Figure 9 As shown in (a), neither the opening portion 2016a nor the opening portion 2016d functions as a channel portion, but one opening portion, for example, the opening portion 2016d belongs to the TFT element corresponding to the adjacen...

Embodiment approach 3

[0259] use Figure 9 (b) The structure of the TFT substrate according to Embodiment 3 of the present invention will be described. also, Figure 9 (b) is the same as in Embodiment 1 above image 3 In the corresponding figures, other configurations are the same as those in Embodiments 1 and 2 described above, so illustration and description thereof are omitted.

[0260] Such as Figure 9 As shown in (b), in the TFT substrate according to this embodiment, the partition wall 2116 defines four openings 2116 a , 2116 b , 2116 c , and 2116 d . Among them, the connection wirings 2115a and 2115d are arranged at the bottom of the openings 2116a and 2116d, respectively, and do not function as channel parts.

[0261] Furthermore, in this embodiment, if Figure 9 As shown in (b), neither the opening portion 2116a nor the opening portion 2116d functions as a channel portion, but one opening portion, for example, the opening portion 2116d belongs to the TFT element corresponding to the ...

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Abstract

Thin film transistor elements are respectively formed in the first opening and the second opening formed by surrounding the barrier ribs. In the partition wall, the 3rd opening is provided on the different side of the side adjacent to the 1st opening and the side adjacent to the 2nd opening with an interval therebetween. In the case of the bottom of the opening, the center position of the surface area of ​​the lyophilic layer in the first opening is farther away from the center position of the area of ​​the bottom than the side adjacent to the third opening, and , in the case of looking down at the bottom of the first opening and the bottom of the second opening, for one of the first opening and the second opening, the center position of the surface area of ​​the lyophilic layer at the bottom is the same as that of the opening on the one side. The central position of the area of ​​the bottom portion is farther away from the side adjacent to the other opening than the other side.

Description

technical field [0001] The invention relates to a thin film transistor device and its manufacturing method, an organic EL display element and an organic EL display device. Background technique [0002] In liquid crystal display panels and organic EL display panels, thin film transistor devices (devices) in which thin film transistor (TFT (Thin Film Transistor)) elements are formed for each sub-pixel are used in order to control light emission in units of sub-pixels. And, especially, the development of thin film transistor devices using organic semiconductor materials as semiconductor layers has been progressing. [0003] Such as Figure 15 As shown in (a), the organic TFT device related to the prior art, for example, is sequentially stacked with gate electrodes 9012a, 9012b, insulating layer 9013, source electrodes 9014a, 9014b, drain electrodes (not shown) and an organic semiconductor layer on a substrate 9011. 9017a, 9017b. The organic semiconductor layers 9017a and 9017...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336G02F1/1368H01L29/786H01L51/05H01L51/50
CPCG02F1/1368H01L27/1225H01L27/1292H10K19/10H10K59/125H10K71/12H10K10/84H10K10/466H10K2102/3026H10K59/1201H10K59/00H01L27/1214H01L29/66765
Inventor 奥本有子宫本明人受田高明
Owner PANASONIC CORP
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