Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Micro-electromechanical double-layer thin-film cell out-of-plane bending curvature test structure

A technology of double-layer film and test structure, which is applied in the direction of mechanical counter/curvature measurement, etc., can solve problems such as stress difference, achieve stable test process, low test equipment requirements, and stable test parameter values

Inactive Publication Date: 2015-10-28
SOUTHEAST UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The stress difference or stress gradient can be calculated from the radius of curvature

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micro-electromechanical double-layer thin-film cell out-of-plane bending curvature test structure
  • Micro-electromechanical double-layer thin-film cell out-of-plane bending curvature test structure
  • Micro-electromechanical double-layer thin-film cell out-of-plane bending curvature test structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The following description is merely exemplary in nature and not intended to limit the disclosure, application or use. It should be understood that throughout the drawings, corresponding reference numerals indicate like or corresponding parts and features.

[0029] Attached below Figure 1~4 The present invention will be further described.

[0030] The invention proposes a testing structure for the off-plane bending curvature of a micro-electromechanical double-layer film unit. Such as figure 1 As shown, the test structure is composed of two double-layer membrane gate structures 101 and a difference measuring vernier 102 placed oppositely on the left and right.

[0031] The difference measuring vernier 102 is composed of left and right parts. The core structure of the left half of the difference measuring vernier is a "T" structure, and the core structure of the right half is a "convex" structure. Each "T"-shaped head is in a certain alignment relationship with two ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an MEMS (micro electro mechanical system) double-layer film unit out-of-plane curvature testing structure. A measuring unit consists of two double-layer film portal structures and an error measuring cursor, wherein the two double-layer film portal structures are left and right double-layer film portal structures in opposite arrangement, the error measuring cursor consists of a left part and a right part, the double-layer film portal structures consist of an anchor region and two straight beams and are formed through overlapping an upper layer film material and a lower layer film material, one end of the straight beam is connected with the anchor region, the other end of the straight beam of the left double-layer film portal structure is connected with the straight beam of the left half part of the error measuring cursor, and the other end of the straight beam of the right double-layer film portal structure is connected with the straight beam of the right half part of the error measuring cursor. The simple double-layer film portal structure is utilized, in addition, the error measuring cursor is matched, the out-of-plane curvature of double-layer films formed by the MEMS common-use film materials can be obtained, in addition, the structure can be popularized to the testing under the condition of film materials with more layers, and a measuring method and a parameter extraction calculation method are very simple.

Description

technical field [0001] The invention provides a test structure for off-plane bending curvature of a micro-electro-mechanical double-layer film unit, which belongs to the technical field of micro-electro-mechanical system (MEMS) material parameter testing. Background technique [0002] The performance of microelectromechanical devices is closely related to material parameters. Due to the influence of processing, some material parameters will change. These uncertain factors caused by processing technology will make device design and performance prediction uncertain and unstable. Case. [0003] Thin-film materials are widely used in the manufacture of micro-electromechanical device structures, especially in surface micro-mechanical structures. Thin-film materials are the main materials of structural materials, and are usually manufactured by chemical vapor deposition (CVD) or physical vapor deposition (PVD). Examples include silicon nitride, polysilicon, silicon dioxide, metal...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01B5/20
Inventor 李伟华王雷张晓强张璐周再发孙超
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com