Device and method for manufacturing polysilicon by using dummy bar based on electron beam smelting

Abstract

The invention provides a high-purity polysilicon manufacturing method by utilizing a dummy bar as a starting block and a device thereof. The device comprises a vacuum chamber; a first electron gun and a second electron gun, which are arranged on the upper side of the vacuum chamber and used for irradiating electron beams to the vacuum chamber; a silicon melting unit, which is arranged on a first electron beam irradiation area corresponding to the first electron gun and supplied with powdery raw material silicon, which has been melt by the first electron beam; and a one-way solidifying unit, which is arranged on a second electron beam irradiation area corresponding to the second electron gun. A starting block is arranged in the one-way solidifying unit, the starting block is driven downward to transport the molten silicon, and a cooling channel, which makes the molten silicon to solidify and be casted from the bottom to the top, is formed in the lower part of the one-way solidifying unit. The starting block comprises a dummy bar, which comprises a silicon button, which is jogged with the upper part of the dummy bar.

Description

technical field [0001] The present invention relates to a polysilicon manufacturing technology, and in more detail, relates to a method and device for manufacturing polysilicon based on electron beam smelting using a dummy bar, thereby improving silicon refining efficiency. Background technique [0002] The purity of silicon is usually represented by 2N, 3N, 6N, 11N, etc. Here, the number in front of 'N' represents the number of 9 in weight percentage (wt%), for example, 2N represents 99% purity, 6N represents 99.9999% purity, and 11N represents 99.999999999% purity. [0003] Semiconductor-grade silicon requires ultra-high purity of 11N. However, as known in the prior art, silicon, which is used as a raw material of a photovoltaic cell and has a relatively low purity of 5N˜7N, provides light conversion efficiency similar to that of high-purity silicon with 11N. [0004] Semiconductor-grade silicon is produced through a chemical vaporization process. However, in addition t...

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Problems solved by technology

However, in addition to high production costs, this silicon production process also produces a large amount of pollutants and has low production efficiency

[0005] Therefore, the silicon production process is not suitable for the production of semiconductor-grade silicon used as a raw material for photovoltaic cells, and vigorous efforts have been made to develop metallurgical refining processes that can achieve mass production of high-purity silicon at low cost

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