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Storage device, storage system and method of operating the same

A storage device and storage system technology, applied in the direction of information storage, static memory, digital memory information, etc., can solve the problems of inability to restrict access, increase of interference disturbance, deterioration of refresh characteristics, etc.

Active Publication Date: 2018-07-10
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the gap between cells decreases, for example because of scaling, then disturbances such as interference generated by neighboring cells or lines increase
[0008] For RAM (e.g., DRAM), it is not possible to restrict access to specific addresses, therefore, specific cells may be repeatedly accessed
With repeated visits, the refresh characteristics of the cells deteriorate rapidly due to disturbances

Method used

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  • Storage device, storage system and method of operating the same
  • Storage device, storage system and method of operating the same
  • Storage device, storage system and method of operating the same

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Embodiment Construction

[0060] Embodiments of the inventive concept will now be described more fully hereinafter with reference to the accompanying drawings, in which some exemplary embodiments are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like numbers refer to like elements throughout.

[0061] It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another...

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Abstract

Provided are a storage device, a storage system, and an operating method thereof. A method of operating a storage device including a plurality of storage units including a first storage unit and a second storage unit adjacent to the first storage unit, the method comprising: accessing each When the first storage unit is described, count the disturbance value of the second storage unit; update the disturbance count value of the second storage unit based on the count; based on the disturbance count value of the second storage unit, an expected threshold , and a maximum disturbance count value to adjust the refresh schedule; and when the second storage unit is refreshed according to the adjusted refresh schedule, reset the disturbance count value and the maximum disturbance count value of the second storage unit.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to U.S. Provisional Patent Application No. 61 / 646,410, filed May 14, 2012, and Korean Patent Application No. 10-2012-0093113, filed August 24, 2012, incorporated by reference The contents of each are incorporated herein. technical field [0003] Some exemplary embodiments of the present invention relate to memory devices, and more particularly, to memory devices and / or memory devices configured to reduce degradation of dynamic refresh characteristics due to disturbances occurring during access to memory cells by controlling refresh operations system, and / or its method of operation. Background technique [0004] A high voltage is applied to a word line of a semiconductor memory device such as a dynamic random access memory (DRAM), enabling a transistor to access a memory cell. However, the electric field generated by the high voltage may lower the threshold voltage of access transistor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/4063
CPCG11C11/40622G11C11/403G11C11/40615
Inventor 郑扶日金昭映
Owner SAMSUNG ELECTRONICS CO LTD