Protective circuit of insulated gate bipolar transistor

Abstract

The invention provides a protective circuit of an insulated gate bipolar transistor. The protective circuit of the insulated gate bipolar transistor comprises a control unit, a variable grid resistor, a withdraw saturation protective circuit, a di / dt protective circuit, a clamping control circuit and a fault feedback circuit. Intelligent protection of the insulated gate bipolar transistor is achieved through the arrangement of the control unit, main embodiments are that under the control of the control unit, a resistance value of the variable grid resistor can be changed and on-off losses of insulated gate bipolar transistor devices are effectively reduced; under the control of the control unit, the withdraw saturation protective circuit, the di / dt protective circuit, the clamping control circuit and the fault feedback circuit can achieve the relatively complete protection function. Therefore, the protective circuit of the insulated gate bipolar transistor is more complete in protection function, and the failure rate of the insulated gate bipolar transistor is low.

Description

technical field [0001] The invention relates to the driving technology of the insulated gate bipolar transistor, in particular to a protection circuit of the insulated gate bipolar transistor. Background technique [0002] With the development of high-power power electronic semiconductor devices, high-voltage, high-current insulated gate bipolar transistors (Insulated Gate Bipolar Transistor, IGBT for short) are more and more widely used. At present, most of the electric locomotive traction converters use IGBT devices. IGBT is a voltage-driven device with high input impedance and usually works in a high-frequency switching state. Therefore, the voltage spike caused by the inductance of the IGBT driving main circuit will be coupled into the drive control loop through the IGBT junction capacitance, and then Cause the malfunction of IGBT, and in severe cases, it will exceed the safe working area of ​​IGBT and damage the IGBT. Therefore, a well-functioning IGBT protection circ...

AI Technical Summary

Problems solved by technology

IGBT is a voltage-driven device with high input impedance and usually works in a high-frequency switching state. Therefore, the voltage spike caused by the inductance of the IGBT driving main circuit will be coupled into the drive control loop through the interjunction capacitance of the IGBT, and then Cause IGBT malfunction, in severe cases, it will exceed the IGBT safe working area and damage the IGBT

Images