Protective circuit of insulated gate bipolar transistor

A bipolar transistor and protection circuit technology, applied in the field of insulated gate bipolar transistor drive, can solve problems such as IGBT malfunction, high input impedance, damage to IGBT, etc., and achieve low failure probability, reduce failure rate, and reduce impact. Effect

Active Publication Date: 2013-12-04
CRRC YONGJI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

IGBT is a voltage-driven device with high input impedance and usually works in a high-frequency switching state. Therefore, the voltage spike caused by the inductance of the IGBT driving main circuit wil

Method used

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  • Protective circuit of insulated gate bipolar transistor
  • Protective circuit of insulated gate bipolar transistor
  • Protective circuit of insulated gate bipolar transistor

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Experimental program
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Embodiment Construction

[0015] Such as figure 1 As shown, the structure schematic diagram of Embodiment 1 of the IGBT protection circuit provided by the present invention. The IGBT protection circuit in this embodiment includes: a control unit 1 , a desaturation protection circuit 3 , a di / dt protection circuit 4 , a clamp control circuit 5 , a fault feedback circuit 6 and a variable gate resistor 2 . Wherein, the desaturation protection circuit 3 is used to monitor the voltage between the collector and the emitter of the IGBT, compare the voltage with a preset voltage saturation lower limit to obtain a comparison result, and compare the voltage The result is output to the control unit 1 . The di / dt protection circuit 4 is used to monitor the current of the collector when the insulated gate bipolar transistor is turned on, and calculate according to each current when the insulated gate bipolar transistor is in the on state The current change rate value of the collector, and output the current chang...

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Abstract

The invention provides a protective circuit of an insulated gate bipolar transistor. The protective circuit of the insulated gate bipolar transistor comprises a control unit, a variable grid resistor, a withdraw saturation protective circuit, a di/dt protective circuit, a clamping control circuit and a fault feedback circuit. Intelligent protection of the insulated gate bipolar transistor is achieved through the arrangement of the control unit, main embodiments are that under the control of the control unit, a resistance value of the variable grid resistor can be changed and on-off losses of insulated gate bipolar transistor devices are effectively reduced; under the control of the control unit, the withdraw saturation protective circuit, the di/dt protective circuit, the clamping control circuit and the fault feedback circuit can achieve the relatively complete protection function. Therefore, the protective circuit of the insulated gate bipolar transistor is more complete in protection function, and the failure rate of the insulated gate bipolar transistor is low.

Description

technical field [0001] The invention relates to the driving technology of the insulated gate bipolar transistor, in particular to a protection circuit of the insulated gate bipolar transistor. Background technique [0002] With the development of high-power power electronic semiconductor devices, high-voltage, high-current insulated gate bipolar transistors (Insulated Gate Bipolar Transistor, IGBT for short) are more and more widely used. At present, most of the electric locomotive traction converters use IGBT devices. IGBT is a voltage-driven device with high input impedance and usually works in a high-frequency switching state. Therefore, the voltage spike caused by the inductance of the IGBT driving main circuit will be coupled into the drive control loop through the IGBT junction capacitance, and then Cause the malfunction of IGBT, and in severe cases, it will exceed the safe working area of ​​IGBT and damage the IGBT. Therefore, a well-functioning IGBT protection circ...

Claims

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Application Information

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IPC IPC(8): H03K17/08H03K17/567
Inventor 张晋芳陈广泰刘志敏杨春宇马瑞王翠云
Owner CRRC YONGJI ELECTRIC CO LTD
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