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Dry cleaning method

A technology for cleaning gas and composition, which is applied in the field of dry cleaning and can solve problems such as undiscovered

Inactive Publication Date: 2013-12-04
CENT GLASS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In addition, regarding MgO, Mg a Zn b Oh c (0≤a≤1, 0≤b≤1, 0≤c≤1, and 0.5≤a+b≤1), no cases of dry cleaning by dry cleaning method were found

Method used

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Examples

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Embodiment 1～35

[0031] Table 1 shows the objects to be cleaned, the cleaning conditions, and the measurement results of the etching rate in this example. The film forming chamber pressure is 2.7kPa, using N 2 Hexafluoroacetylacetone diluted to 50% by volume was used as the cleaning gas, and the film composition of deposit sample 7 was ZnO, Zn 0.5 Mg 0.5 O, Zn 0.5 Mg 0.5 Oh 0.1 , Zn 0.5 OH, Mg 0.5 OH, MgO, respectively, at various temperatures, the cleaning test of the above operation was carried out (Examples 1-24). From the results, it can be seen that the deposit sample 7 can be cleaned in any of the cases where the temperature of the deposit sample 7 is 110°C, 160°C, 200°C, or 380°C.

[0032] In addition, the following cases can also be cleaned in the same manner: except that the β-diketone is changed to trifluoroacetylacetone, it is carried out in the same manner as in Example 3 (Example 25); the dilution gas is changed to O 2 , Ar or a mixture thereof, except that it was carried ...

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Abstract

Disclosed is a dry cleaning method for removing a composition represented by a compositional formula of Mg a Zn b OH c (0‰¤a‰¤1, 0‰¤b‰¤1, 0‰¤c‰¤1, and 0.5‰¤a+b‰¤1), which accumulates in a film formation chamber or in an exhaust pipe of an apparatus for forming a composition represented by a compositional formula of Mg X Zn 1-X O (0‰¤x‰¤1) into a film, by using a cleaning gas. This method is characterized by that a cleaning gas containing ²-diketone is used and that the composition is removed by reacting the composition accumulated with the cleaning gas at a temperature of from 100 °C to 400 °C. It is possible by this method to remove the composition without opening the apparatus.

Description

technical field [0001] The present invention relates to a dry cleaning method using zinc oxide used as a transparent electrode material, a semiconductor material, or Mg used as a novel buffer layer of a chalcopyrite-based solar cell x Zn 1-x Mg accumulated in the film-forming device of O (0≤x≤1) a Zn b Oh c (0≤a≤1, 0≤b≤1, 0≤c≤1, and 0.5≤a+b≤1) denoted compositions are eliminated. Background technique [0002] As a transparent electrode material and a semiconductor material, zinc oxide is a compound that has attracted attention in recent years. In addition, as a new buffer layer for chalcopyrite-based solar cells, Mg x Zn 1-x O(0≤x≤1) is a composition that has attracted attention in recent years. In the case of depositing these oxide films of magnesium and zinc, Zn (C 11 h 19 o 2 ) 2 , Mg (C 11 h 19 o 2 ) 2 MOCVD method and sputtering method used as raw materials. Wherein, in the film-forming apparatus using the above-mentioned method, when performing the film...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/31C23C16/44H01L21/205
CPCB08B9/027C23C16/4405H01L21/31H01L21/302H01L21/0262
Inventor 梅崎智典武田雄太
Owner CENT GLASS CO LTD