12 results about "Hexafluoroacetylacetone" patented technology

The application relates to the technical field of aviation enamel, and provides aviation high-performance enamel and a preparation method. The enamel is composed of modified fluorocarbon resin, nano boron nitride grafted polysiloxane, zinc hexafluoroacetylacetone, zirconium phosphate silver-loaded antibacterial agent, bisphenol F type epoxy resin and cerium oxide coated graphene, wherein the modified fluorocarbon resin is a tetrafluoroethylene-perfluoroalkyl vinyl ether-maleic anhydride terpolymer. The preparation method adopts a special system, realizes dynamic stage mixing through a lifting-rotating linkage stirring mechanism, and comprises a driving motor, a transmission rod and an arc-shaped piece which are matched to enable the stirring rod to synchronously perform lifting and rotating movement; the stirring direction is controlled to be reversed through the engagement of a special-shaped groove and the driving rod, and a pulse type reduction process of the silver-loaded antibacterial agent is combined. The aviation high-performance enamel has obvious improvement in salt mist resistance, adhesion, antibacterial rate and thermal decomposition performance.

The invention provides a repair process for a selective atomic layer. The repair process comprises the following steps: placing a semiconductor structure in an ALD reaction cavity, firstly introducing a first precursor to perform selective adsorption on the surface of a metal interconnection line, then introducing a second precursor to react with the first precursor adsorbed on the surface of the metal interconnection line, and repeating the steps of selective adsorption and reaction to obtain a metal atomic layer; wherein the first precursor is selected from bis (hexafluoroacetylacetone) copper (II) or (trimethylsilane methyl) copper (I); the second precursor is a reducing gas. According to the method, the specific chemical reaction between the specific precursor substance and the copper metal surface is adopted, high selectivity in the repairing process is achieved, then through the reduction reaction, the deposition reaction only occurs on the exposed surface of the copper interconnection line and in pores and gaps in the copper interconnection line and does not deposit on the dielectric layer, and then precise repairing is achieved.

The application provides an ALD deposition method for a seed layer in a high-aspect-ratio through silicon via, comprising the following steps: preparing a high-aspect-ratio through silicon via on a substrate, the aspect ratio of the through silicon via being greater than or equal to 10:1; depositing a copper film or a cobalt film in the through silicon via by ALD, or depositing a copper seed layer after preparing an insulating layer and a diffusion barrier layer; wherein the precursors used for depositing the copper film or the copper seed layer comprise at least one of copper bis(hexafluoroacetylacetonate), dimethylamino-2-propoxy copper, bis(dimethylamino-2-propoxy) copper and bis(N,N'-disec-butylacetamidine) copper, and ZnEt2; and a secondary annealing treatment is performed, the temperature of the secondary annealing being higher than that of the primary annealing. By using the technical scheme of the application, the seed layer obtained is more compact, flat and uniform, and has good coverage on the surface, sidewall and bottom, which is beneficial to the successful preparation of a subsequent electroplated layer.

The invention provides a titanic acid nanotube loaded sub-nanometer palladium catalyst, a preparation method and application, the titanic acid nanotube is used as a carrier of the catalyst, an active material palladium is dispersed and loaded on the carrier in a sub-nanometer cluster form, the average particle size of the active material palladium is less than 1 nm, and the loading capacity of the active material palladium is 1.9-3.9 wt%. The method comprises the following steps: carrying out heat treatment on a titanic acid nanotube carrier in an air atmosphere to regulate and control the surface hydroxyl density of the titanic acid nanotube carrier; and putting the titanic acid nanotube carrier subjected to heat treatment into an atomic layer deposition reactor, and synthesizing the titanic acid nanotube loaded sub-nano palladium catalyst by taking palladium hexafluoroacetylacetonate as a precursor and formaldehyde as a precursor and adopting an atomic layer deposition method. According to the method, along with the increase of the heat treatment temperature, the density of hydroxyl groups on the surface of the H2Ti3O7 carrier is increased, the hydroxyl groups can effectively inhibit Pd site agglomeration, a Pd-O-carrier covalent bonding structure is formed, migration of Pd particles in the reaction can be inhibited, and the Pd cluster size reaches the sub-nanometer level.

This invention discloses a copper nanoparticle-based SERS sensor, its preparation method, and its application in trace detection of doxorubicin. The sensor comprises a porous anodic alumina substrate, metal halide-oxide nanosheets vertically grown on its surface, and copper nanoparticles uniformly deposited on the surface and sidewalls of the nanosheets via atomic layer deposition (ALD). The preparation method involves first preparing the porous anodic alumina substrate via anodic oxidation, then self-assembling and growing the metal halide-oxide nanosheets, and finally using copper hexafluoroacetylacetone as a copper precursor and diethylzinc as a reducing agent, employing ALD to precisely control the particle size and distribution of the copper nanoparticles. This sensor is used for trace doxorubicin detection, with a detection limit as low as 0.5 ppm, covering the clinical therapeutic drug monitoring concentration range. It has the advantages of low cost, high sensitivity, and controllable structure. This invention provides a low-cost, high-sensitivity, structurally controllable, and highly consistent SERS sensor for trace doxorubicin detection.

The present invention provides a preparation method for a metal fluoride thin film. An atomic layer deposition reaction is performed between a metal precursor and an oxygen source to obtain the metal fluoride thin film, the metal precursor is selected from hexafluoroacetylacetonate. The preparation method provided by the present invention does not employ toxic fluorine-containing gases, thereby ensuring the safety of deposition of the metal fluoride thin film. By adopting an atomic layer deposition method to prepare the metal fluoride thin film, the resulting film layer is uniform and has a dense surface, and exhibits strong corrosion resistance.

The invention provides an HBIW hydrogenolysis debenzylation catalyst and a preparation method and application thereof.According to the method, in a rotary reactor, a titanic acid nanotube is used as a carrier, palladium hexafluoroacetylacetonate is used as a precursor, formaldehyde is used as a precursor, and an atomic layer deposition method is adopted for synthesizing a titanic acid nanotube loaded palladium catalyst; the titanic acid nanotube loaded palladium catalyst is the HBIW hydrogenolysis debenzylation catalyst. The active substance palladium is nano-particles with the average particle size of 1-5nm; the loading capacity of the active substance palladium is 2.5 wt%-7.8 wt%. The catalyst is applied to a primary hydrogenolysis debenzylation reaction of HBIW. After the HBIW hydrogenolysis debenzylation catalyst is recycled for three times, the decrease rate of the TADBIW yield is less than or equal to 10%, and the wastage rate of the active substance palladium is less than or equal to 20wt%. In the invention, the mesoporous structure of the titanic acid nanotube can eliminate internal diffusion and accelerate mass transfer of a reaction substrate. Hydroxyl naturally formed on the surface of the titanic acid nanotube and palladium form a strong covalent bond, and migration, agglomeration and Pd loss can be inhibited.

Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using an organic vapor such as a carboxylic acid. In some implementations, the organic vapor is trifluoroacetic acid. In some implementations, the organic vapor is hexafluoro-acetylacetone. A metal-containing resist film such as an EUV-sensitive organo-metal oxide may be deposited on a semiconductor substrate using a dry or wet deposition technique. The metal-containing resist film on the semiconductor substrate may be developed using the organic vapor, or residue of metal-containing resist material formed on surfaces of a process chamber may be removed using the organic vapor.

The invention belongs to the technical field of semiconductor device manufacturing, and relates to preparation of a positive electron beam anti-corrosion film, in particular to a zinc-dichloroimidazole coordination compact film and a preparation method thereof. According to the preparation method, atomic layer deposition and molecular layer deposition are adopted for alternate deposition to form a film, and a film material contains electron beam sensitive leaving groups, is a positive anti-corrosion film, cannot be etched by hexafluoroacetylacetone when not irradiated by electron beams, can be etched by hexafluoroacetylacetone after being irradiated by the electron beams, and can be etched by hexafluoroacetylacetone after being irradiated by the electron beams. A liquid solvent is not used for film forming and etching, chemical waste liquid is not generated, environmental friendliness is achieved, the film is loaded on the 5A zeolite and has the potential for manufacturing high-precision patterns through electron beam photoetching, a potential scheme is provided for the process of depositing the positive electron beam anti-corrosion film on the silicon substrate, and the method is suitable for large-scale popularization and application. The method can solve the problems that a liquid solvent is used and the film thickness is not uniform in the film forming process of the electron beam anti-corrosion film, and has important application in the aspects of advanced semiconductor manufacturing procedures and the like.

The application provides a preparation method of high-purity palladium hexafluoroacetylacetone, comprising the following steps: step S1, adding a pH regulator, hexafluoroacetylacetone and water into a reactor to dissolve to obtain a dissolved solution, and adding a divalent palladium salt into water to dissolve to obtain a divalent palladium salt aqueous solution; step S2, introducing inert gas into the dissolved solution; step S3, adding an organic phase into the dissolved solution to form a microemulsion reaction system; step S4, adding the divalent palladium salt aqueous solution into a reactor in an ultrasonic generator in the microemulsion reaction system, and ultrasonic treatment to obtain a reaction solution; step S5, filtering and washing the reaction solution to neutral, and drying the reaction solution to obtain a crude product; step S6, purifying the crude product, rotary evaporation, and drying to obtain a primary purified product; step S7, recrystallizing the primary purified product, and filtering to obtain a crystal; and step S8, drying the crystal to obtain a product. The preparation method has the advantages of simple process, controllable condition, small pollution, high preparation efficiency of the palladium hexafluoroacetylacetone, and high purity.

The invention relates to the technical field of fluorine compound preparation, and discloses an efficient synthesis method of hexafluoroacetylacetone. The efficient synthesis method of hexafluoroacetylacetone comprises the following steps: step 1, adding a metal compound into a solvent A, dropwise adding trifluoroacetone and ethyl trifluoroacetate, reacting, and distilling out the solvent A to obtain a reaction mixture; 2, cooling the reaction mixture obtained in the step 1, adding a solvent B, carrying out suction filtration, washing the obtained filter cake with the solvent B, adding inorganic acid, stirring, and distilling to obtain a product, namely hexafluoroacetylacetone; according to the efficient synthesis method of hexafluoroacetylacetone, the product yield reaches 90% or above, the reaction period is shortened to 4 days from 14 days, the production cost is reduced by about 50%, and the method has wide application prospects.

The application belongs to the technical field of semiconductor device manufacturing, and relates to preparation of a positive electron beam resist film, in particular to a zinc-dichloroimidazole coordination dense film and a preparation method thereof. The preparation method comprises film deposition by alternately adopting atomic layer deposition and molecular layer deposition, and the film material contains an electron beam sensitive leaving group, is a positive resist film, cannot be etched by hexafluoroacetylacetone when not irradiated by an electron beam, and can be etched by hexafluoroacetylacetone after irradiation by an electron beam. Neither film deposition nor etching uses a liquid solvent, no chemical waste liquid is generated, and the method is environmentally friendly. The film is loaded on 5A zeolite and has potential for electron beam lithography for manufacturing high-precision patterns, provides a potential scheme for a process of depositing a positive electron beam resist film on a silicon substrate, can solve the problems of using a liquid solvent in the film deposition process of the electron beam resist film and uneven film thickness, and has important application in semiconductor advanced processes and the like.