Ultra-trace anion and cation detection system on wafer surface

Abstract

The invention discloses a system for detecting ultramicro anions and cations on a wafer surface and an equipment system thereof. The system comprises a micro-cavity processing device and an ultramicro anion and cation detecting device. The upper cavity part and the lower cavity part of the micro-cavity processing device relatively move between the open position and the close position. When the upper cavity part and the lower cavity part are in the close position, a micro-cavity is formed, a semiconductor wafer is arranged in the cavity, the upper cavity part and / or the lower cavity part comprises one or more inlets, which are used for introducing ultrapure water into the cavity, and one or more outlets, which are used for discharging processed ultrapure water from the cavity. The ultramicro anion and cation detecting device separates the anions and cations in the processed ultrapure water, then condenses the separated anions and cations, and finally carries out anion and cation detections on condensed anions and cations. Thus an online detection and / or analysis of ultramicro anions and cations on a wafer surface is achieved.

Description

【Technical field】 [0001] The invention relates to the field of surface treatment of semiconductor wafers or similar workpieces, in particular to an ultra-trace anion and cation detection system on the wafer surface. 【Background technique】 [0002] Semiconductor wafers are the carrier used in the production of integrated circuits. In the process flow of semiconductor integrated circuit manufacturing, there are more than 100 steps related to wafer surface cleaning and chemical treatment, and these steps account for 25% to 35% of the total production process steps. Among them, the most commonly used wet treatment process is: firstly treat the surface of the wafer with an appropriate chemical agent, and then rinse it with a large amount of ultra pure water (Ultra Pure Water, UPW for short). Various chemical residues left on the wafer surface will cause errors and defects in the production process, including non-uniformity, lattice defects, holes, leakage, short circuit and over...

AI Technical Summary

Problems solved by technology

[0004] The above-mentioned chemical pollution detection and analysis methods cannot realize online monitoring of the chemical preparation residues in the processed wafer, and the wafer processing effect cannot reach the ultra-trace level of chemical pollution detection.

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