Unlock instant, AI-driven research and patent intelligence for your innovation.

Channel depth adjustment in memory systems

A technology of memory and virtual memory, which is applied in the direction of memory system, instrument, memory architecture access/allocation, etc., and can solve a large amount of power problems

Active Publication Date: 2013-12-25
MICRON TECH INC
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, a large amount of power is usually required to operate high bandwidth

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Channel depth adjustment in memory systems
  • Channel depth adjustment in memory systems
  • Channel depth adjustment in memory systems

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0007] In the following detailed description of the invention, reference is made to the accompanying drawings which form a part hereof, and in which are shown by way of illustration specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and material, structural, logical, electrical, etc. changes may be made.

[0008] figure 1 Memory system 100 is shown coupled to electronic system 140 , such as via a wireless, non-wireless, or optical interface, for example. An example of memory system 100 may include one or more individual memory devices coupled together. with below image 3 Similar to the example described in , in one example, a system including memory system 100 and electronic system 140 may be an information handling system, such as a personal computer. Other such systems may include, for example, music players, te...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Memory devices, systems and methods are described, such as those including a dynamically configurable channel depth. Devices, systems and methods are described that adjust channel depth based on hardware and / or software requirements. One such device provides for virtual memory operations where a channel depth is adjusted for the same physical memory region responsive to requirements of different memory processes.

Description

[0001] priority application [0002] This application claims the benefit of priority to US Application Serial No. 13 / 089,621, filed April 19, 2011, which is hereby incorporated by reference in its entirety. technical field Background technique [0003] Computer memory operations often deal with competing technical hurdles. Fast memory performance can be achieved by designing devices with high bandwidth. However, large amounts of power are generally required to operate high bandwidths. Low power consumption is also desired, and often competes with the desire for faster memory operations. It would be desirable to provide memory devices that improve memory speed and improve power consumption. Contents of the invention Description of drawings [0004] figure 1 A system including a memory system coupled to an electronic system according to an embodiment of the invention is shown. [0005] figure 2 A block diagram of a memory system in operation according to an embodi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02G06F12/08
CPCG06F12/0607G06F2212/1016G06F2212/1028G06F12/10G06F13/1678Y02D10/00
Inventor 罗伯特·沃克尔
Owner MICRON TECH INC