Non-volatile memory device and memory system and management, erasing and programming methods

Abstract

A method for erasing a nonvolatile memory device includes setting an erasing mode, and performing one of a normal erasing operation and a fast erasing operation according to the set erasing mode. A normal erase operation is performed to set the threshold voltage of the memory cell to an erased state lower than the first erase verify level. A flash erase operation is performed to set the threshold voltage of the memory cell to a dummy erased state lower than the second erase verify level. The second erase verify level is higher than the first erase verify level.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2012-0075596 filed with the Korean Intellectual Property Office on Jul. 11, 2012, the entire contents of which are incorporated herein by reference. technical field [0003] The inventive concepts described herein relate to non-volatile memory devices, memory systems including the same, and related block management, erasing and programming methods. Background technique [0004] Semiconductor memory devices are generally classified as either volatile or nonvolatile. A nonvolatile semiconductor memory device may retain data stored therein even in a power-off state, whereas a volatile memory device may lose stored data when power is interrupted. [0005] Depending on the fabrication technique used, non-volatile memory devices can be permanent or reprogrammable. Non-volatile memory devices can be used to store user data, program data, and microcode da...

AI Technical Summary

Problems solved by technology

Non-volatile semiconductor memory devices can retain data stored in them even in a power-off state, while volatile memory devices can lose stored data when power is interrupted

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